
RSE002N06TL Discrete Semiconductor Products |
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Allicdata Part #: | RSE002N06TLTR-ND |
Manufacturer Part#: |
RSE002N06TL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 0.25A EMT3 |
More Detail: | N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 24000 |
1 +: | $ 0.05000 |
10 +: | $ 0.04850 |
100 +: | $ 0.04750 |
1000 +: | $ 0.04650 |
10000 +: | $ 0.04500 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RSE002N06TL is one of the several MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) available in the market. A field-effect transistor (FET) is a type of transistor that relies on an electric field to control the electrical behaviour of the device. It is a three-terminal semiconductor device with the source, gate, and drain terminals. The RSE002N06TL is a single MOSFET, which is one of the most common types of FETs used in modern circuitry designs.
The RSE002N06TL is widely used in applications such as low-side and high-side switches, power conversion, voltage regulation and motor control. Generally, FETs can play an important role in switching circuits, power conversion and motor control applications when compared with any other active components available in the market. This makes it an essential component in the integrated electronic control systems. The RSE002N06TL is especially useful in automotive, consumer electronics, industrial, telecommunication and medical applications.
The working principle of the RSE002N06TL is based on the physics of the semiconductor FET. FETs are voltage-controlled devices, meaning that their electrical behaviour is determined by the voltage applied to the gate terminal. When a voltage is applied to the gate terminal, it creates an electric field which controls the flow of current through the device. This electric field forms the channels that form a path for the current to flow through the device. These channels are created by the positive and negative charges that are created at the gate terminal.
In the RSE002N06TL, when a positive voltage is applied to the gate terminal, the channel is opened and current starts to flow from the source terminal to the drain terminal. Conversely, when the voltage applied to the gate terminal is negative, the channel is closed and current does not flow. The current flowing through the device is proportional to the voltage applied at the gate terminal, meaning that the gate voltage has a direct influence on the current flow.
The RSE002N06TL is an important component used in many electronic designs. It plays an important role in switching, power conversion and motor control applications. Its working principle is based on the physics of the semiconductor FET and its behavior is determined by the voltage applied to the gate terminal. This makes the RSE002N06TL an ideal choice for applications such as low-side and high-side switches, power conversion, voltage regulation and motor control.
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