RSH100N03TB1 Discrete Semiconductor Products |
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| Allicdata Part #: | RSH100N03TB1TR-ND |
| Manufacturer Part#: |
RSH100N03TB1 |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 10A SOP8 |
| More Detail: | N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP |
| DataSheet: |  RSH100N03TB1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.33000 |
| 10 +: | $ 0.32010 |
| 100 +: | $ 0.31350 |
| 1000 +: | $ 0.30690 |
| 10000 +: | $ 0.29700 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -- |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1070pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 13.3 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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RSH100N03TB1 is a type of single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that can be used in a wide variety of applications, ranging from power amplifiers to high-speed switching. The device is a high-performance MOSFET designed for use in high-power and high-load applications.
The device is built using an advanced silicon-on-insulator (SOI) technology, which provides superior performance and offers low gate charge, high gate resistance and extremely low output capacitance. This enables the device to operate in high-frequency switching applications and high-power switching applications. Additionally, the RSH100N03TB1 also features a low on-resistance, which makes it suitable for use in power amplifiers.
The device has an extremely low input capacitance, allowing for high-frequency applications with minimal signal loss. The device also features high drain-source breakdown voltage and excellent thermal stability, allowing for reliable operation at higher temperature. Moreover, the device is designed to be tolerant to ESD (electrostatic discharge) and is reverse bias protected.
The working principle of the RSH100N03TB1 is based on the MOSFET technology. This type of transistor works by controlling the flow of electricity between the source and drain terminals by changing the voltage applied to the gate terminal. When a voltage is applied to the gate terminal, it creates an electric field around the transistor channel, which makes the channel conductive, allowing charge carriers to flow between the source and drain.
The current flow through the channel can be controlled by the voltage applied to the gate. When the gate voltage is increased, the electric field increases, which makes the channel more conductive and allows more current to flow through it. When the gate voltage is decreased, the electric field decreases and the channel becomes less conductive, which reduces the flow of current.
The RSH100N03TB1 device is widely used in different applications, including power amplifiers, motor control, lighting and switches. The device is also used in the audio, video and gaming industries, as well as in computer and communication systems. The device offers excellent performance and reliability, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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