RSJ10HN06TL Discrete Semiconductor Products |
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| Allicdata Part #: | RSJ10HN06TLTR-ND |
| Manufacturer Part#: |
RSJ10HN06TL |
| Price: | $ 2.51 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 60V 100A LPTS |
| More Detail: | N-Channel 60V 100A (Ta) 100W (Tc) Surface Mount LP... |
| DataSheet: |  RSJ10HN06TL Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 2.28218 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | LPTS |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11000pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 202nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The RSJ10HN06TL is a high-efficiency, P-channel, enhancement-mode field-effect transistor (FET). It is often used as a power switch in many applications such as battery protection, motor control, audio amplifier, or as a switch or sensing element. In this article we will explore the application field and working principle of the RSJ10HN06TL.
Application Field
The RSJ10HN06TL is a rated at 10A and 200V, making it suitable for number of medium power applications. It is particularly well suited for use in high efficiency switching applications, with minimal heat generation. This makes the RSJ10HN06TL an ideal choice for applications where high efficiency is required, such as switching power supplies, solar power switching, battery charger switches, and motor control circuits.
The RSJ10HN06TL is also suitable for use in audio amplifier applications. It has low distortion characteristics, making it a suitable choice when high-fidelity is desired. It is also frequently used as a switch or sensing element in a variety of systems and circuits.
Working Principle
The RSJ10HN06TL uses an enhancement-mode FET design, which requires an external voltage source in order to turn the device on. The gate voltage controls the current through the channel, with higher voltages increasing the current flow.
When the gate voltage is zero, the FET is switched off and no current flows through the channel. As the gate voltage is increased, the current through the channel increases as well, creating a channel between the source and drain. This channel conducts current when the gate voltage is above the specified threshold voltage.
The FET is an efficient device that has very low on-resistance, which allows for high efficiency switching. It also has a very fast switching speed, with a range of 8 nsec to 18 nsec for typical loads. This makes it suitable for applications requiring high performance and speed.
Conclusion
The RSJ10HN06TL is a highly efficient and performance oriented FET. It is suitable for a number of medium power applications, including power switches, solar power circuits, audio amplifiers, and motor control circuits. It utilizes an enhancement-mode FET design, which makes it ideal for high-efficiency switching applications. With its low on resistance and fast switching speed, the RSJ10HN06TL is an excellent choice for demanding applications.
The specific data is subject to PDF, and the above content is for reference
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