RSJ250P10FRATL Discrete Semiconductor Products |
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Allicdata Part #: | RSJ250P10FRATLTR-ND |
Manufacturer Part#: |
RSJ250P10FRATL |
Price: | $ 0.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 4V DRIVE PCH MOSFET (AEC-Q101 QU |
More Detail: | P-Channel 100V 25A (Ta) 50W (Ta) Surface Mount LPT... |
DataSheet: | RSJ250P10FRATL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.55363 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8000F @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | SC-83 |
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The RSJ250P10FRATL series are a range of power MOSFETs from Hitachi. The series is a 500-volt range of power MOSFETs, with breakdown voltage ratings of between 30 and 30V, and gate charge ratings between 2 and 3.2nC.
The series is especially designed for high frequency switching applications, where extremely low switching losses are required. It offers a wide operating temperature range. The wide temperature range allows the series to be used in a variety of high speed and high power applications.
Applications for the RSJ250P10FRATL include induction heating, solar cell inverters, motor control, AC/DC converters, and general purpose low power switching applications. The RSJ250P10FRATL is most commonly used in power conversion applications where maximum efficiency and speed are desired.
The RSJ250P10FRATL is a J type single-pole single-throw (SPST) MOSFET. It offers a low RDS(on) and a high voltage rating, making it ideal for applications where both low on-state resistance and high voltage operation are required. It is a common-source transistor, meaning that the output is driven from a common source.
The working principle of the RSJ250P10FRATL is based on the fact that when the gate voltage is increased, the channel resistance between the drain and source decreases, resulting in increased current flow. When the gate voltage is decreased, the channel resistance increases, leading to decreased current flow. This action allows the device to be used as a switch. When a threshold voltage is applied to the gate, current can flow if the source voltage is greater than the threshold voltage.
The RSJ250P10FRATL is not affected by body-drain capacitance and has a fast switching speed. It has a high frequency operation capability, up to 30MHz and is well-suited for RF applications. It also has a low on-state resistance and is capable of operating at temperatures up to 150°C.
The RSJ250P10FRATL is a versatile device and well suited for a variety of power electronics applications. Its low on-state resistance and high frequency operation capability make it an ideal choice for applications requiring very low losses and fast response times. Its high voltage ratings and wide operating temperature range make it well suited for high power and high temperature applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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