Allicdata Part #: | RSJ300N10TL-ND |
Manufacturer Part#: |
RSJ300N10TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 100V 30A LPTS |
More Detail: | N-Channel 100V 30A (Ta) 50W (Tc) Surface Mount LPT... |
DataSheet: | RSJ300N10TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RSJ300N10TL is a high-performance and low-voltage N-Channel MOSFETs manufactured by International Rectifier. It is designed for use in many applications such as deflection and power amplifiers, switching circuits and voltage regulator modules. It provides superior on-state performance with low forward and reverse leakage current. It has an RDS (on) of 4.5 Ω at VGS of 10 V and 800 mA, which is one of the lowest on the market. This device is available in the TO-220AB package and is fully RoHS compliant.
The RSJ300N10TL MOSFETs are designed to provide excellent conduction, switching and avalanche energy performance even in the most demanding applications. The device can operate at up to 100°C junction temperature and is capable of handling more than 500V. It also has a low reverse transfer capacitance (Ciss) of 35 pF which ensures a high speed switching performance.
The RSJ300N10TL MOSFETs are ideal for use in a variety of applications, such as low-voltage switching regulators, DC/DC converters, motor, relay and lamp control, as well as in small package inverters, or even solar applications. It is well suited for use in many of today’s automotive applications due to its low on-state resistance.
The working principle of the RSJ300N10TL MOSFETs is based on the principle of capacitive coupling. When the MOSFET is in the OFF state, the channel between the source and the drain is inverted. This means that when a gate voltage is applied, charge carriers from the source are induced to flow through the channel and into the drain. This flow is controlled by the applied gate-source voltage and can be used to control the current flow between the source and the drain.
The RSJ300N10TL MOSFETs use their capacitive coupling between gate and source to control current flow. They are designed to be used in high-frequency applications, as they possess a low input capacitance and high frequency characteristics. These features allow them to accurately control the current flow while keeping switching losses to a minimum. This makes them ideal for use in applications that require rapid switching, such as in power supplies and DC/DC converters.
The RSJ300N10TL MOSFETs are a reliable and efficient choice for low-voltage applications. They have low on-state resistance, high frequency characteristics and low input capacitance. They are also compliant with RoHS standards and are readily available in the TO-220AB package. These features make them an ideal solution for many applications, including low-voltage switching, power supplies, and DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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