RSJ550N10TL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	LPTS
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6150pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	143nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	16.8 mOhm @ 27.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	55A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The RSJ550N10TL is a type of single-gate field-effect transistor (FET), specifically a metal-oxide semiconductor field-effect transistor (MOSFET). MOSFETs are transistors that use an electric field to control the flow of electrical current in a circuit. This type of MOSFET is particularly specific in its application field and has certain features that make it stand out among other types of FETs.The RSJ550N10TL is a N-channel MOSFET, meaning it is most commonly used when the source is at a lower voltage than the drain, though it can also be used with a reverse polarity in some applications. This FET is normally on, which means that its output voltage is usually low (\'0\' in digital logic) when the input voltage is low. When the voltage is increased beyond its threshold, the output is then high (\'1\' in digital logic).The RSJ550N10TL is especially suited for applications that require high-speed switching. It is designed to provide levels of efficiency and power at a low on-resistance. This makes it useful for switching high-frequency loads that demand rapid response times without consuming excessive amounts of power. It is also capable of providing a wide range of output currents, typically ranging from 0.25 W to 10 W.The RSJ550N10TLS working principle is based on a simple concept. When a voltage is applied to one of the FET\'s terminals (the gate), an electric field is created that affects the flow of current from its source (the source) to its drain (the drain). This field is controlled by the size of the gate voltage, which determines the amount of current flowing through the transistor.In particular, the RSJ550N10TL is designed for low voltage applications such as portable electronics, digital control systems, and power supplies. It is suitable for applications that require high-speed switching, high power efficiency, and low on-resistance. In addition, the device has good thermal characteristics and is resistant to transient thermal overloads.The RSJ550N10TL is a single-gate FET that is especially suited for a range of applications requiring high-speed, low-power switching. It is well-suited for use in applications that require high-frequency loads, fast switching times, and efficient power management. Its low on-resistance and good thermal characteristics make it particularly useful for portable electronics and digital control systems. Its normal \'on\' status also makes it useful for use in digital logic systems.

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