RSL020P03TR Allicdata Electronics

RSL020P03TR Discrete Semiconductor Products

Allicdata Part #:

RSL020P03TRTR-ND

Manufacturer Part#:

RSL020P03TR

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 2A TUMT6
More Detail: P-Channel 30V 2A (Ta) 1W (Ta) Surface Mount TUMT6
DataSheet: RSL020P03TR datasheetRSL020P03TR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.13476
Stock 6000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads
Description

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The RSL020P03TR is a field effect transistor (FET) that is widely used in a variety of applications. It is a single source N-channel enhancement mode FET, which is often employed as a switch, level shifter, or driving element. Its high power capability, low on-resistance, and miniature size make it suitable for different applications.

In general, the functionality of FETs is similar to that of other transistors like BJT (bipolar junction transistors). An FET is an active semiconductor device that is composed of a source, a drain and a gate. By controlling the voltage of the gate, the FET can be used to control the current flow between the source and the drain. Unlike BJT, an FET does not require an external input for biasing. It uses an electric field to control the conductivity between the source and the drain.

The RSL020P03TR is a N-channel FET, which means that it conducts current when the gate voltage is low. This also means that it can be turn on by applying a low voltage at the gate. When the gate voltage is applied, the electrons near the gate get attracted towards the gate and the resistance between the source and the drain decreases. This in turn increases the current flow through the device.

The RSL020P03TR has a maximum drain current of 40A and an RDS-on (drain source on-resistance) of only 0.04 ohms. Its low resistance makes it a suitable choice for power electronics applications. It also has a low threshold voltage of 2 V and a maximum continuous drain-source voltage of 30 V.

The RSL020P03TR is also well suited for automotive applications. It can operate well under temperatures ranging from -55°C to +150°C, making it well suited for automotive environment. Its small package size of SOT-23-3 makes it suitable for space-constrained applications.

The RSL020P03TR can be used in a variety of applications, including power switching, motor control, lighting control, inverter, power controllers, and load switch. Its low on-resistance and small size make it suitable for these applications. It can also be used as a level shifter or driver element in audio amplifiers and power supplies.

In conclusion, the RSL020P03TR is a single source N-channel enhancement mode FET that is well suited for a variety of applications. Its high power capability, low on-resistance, and wide operating temperature range make it a suitable choice for automotive, audio and power electronics applications. It is also easy to use and features a small package size for space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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