RSR020P05FRATL

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	SC-96
Supplier Device Package:	TSMT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	540mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	4.5nC @ 4.5V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	190 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	45V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AbstractRSR020P05FRATL is a FET (Field-effect Transistor) that is commonly used for power switching. This paper explains the application field and working principle of the RSR020P05FRATL. We will also discuss the device technology and its features. Introduction RSR020P05FRATL is an advanced FET transistor device by ROHM Semiconductor (https://www.rohm.com/datasheet/RSR020P05FRATL) that is used for a wide range of applications such as power switching, amplifier circuits, and power supply circuits. This device is especially designed for high frequency switching, making it ideal for applications such as radio transmission, electronic measuring instruments and data communication systems. The FET technology FET (Field-effect Transistor) is a type of transistor that controls current flow by using an electric field. It is a solid-state electronic device with the three basic components: gate, drain, and source. A FET is further divided into two types – voltage-controlled FETs and current-controlled FETs. These two types of FETs differ in their mechanisms for controlling the current flow.Voltage-controlled FETs, like the RSR020P05FRATL device, are known as “field-effect” transistors. These devices use an electric field to control the flow of current. In voltage-controlled FETs, the gate voltage controls the resistance between the drain and the source, thereby controlling the flow of current through the FET.In contrast, current-controlled FETs don’t have a gate voltage. Instead, they use a channel of semiconductor material to control the current. As the resistance of the channel changes, the current flow changes accordingly.How FETs WorkA FET works by controlling the resistance between the drain and the source. When a voltage is applied to the gate of a voltage-controlled FET, it modifies the resistance between the drain and the source. If a high gate voltage is applied, then the resistance between the drain and the source increases, thus reducing the flow of current. Conversely, if a low gate voltage is applied, then the resistance decreases, thus allowing the current to flow more freely.Application Fields of the RSR020P05FRATLThe RSR020P05FRATL device is a voltage-controlled FET that is commonly used for power switching applications. It is suitable for a wide range of applications such as motor control, PWM (Pulse Width Modulation) control, ac generator control, and high-frequency switching.The device is also suitable for applications such as radio transmission, electronic measuring instruments, and data communication systems. It is especially suitable for high-frequency switching applications due to its low input capacitance and high switching speed.Device Features The RSR020P05FRATL is a N-channel FET that is highly reliable and has a low on-state resistance of 0.53 Ω (ohm). It is also suitable for high-frequency switching due to its low input capacitance of 0.44 pF (picofarad).Moreover, the device is packaged in a mini-mold (SOP8D) package for maximum performance and a small size. This allows the device to be used in a wide range of applications and makes it suitable for use in space-constrained and high-density circuit designs. ConclusionThis paper presents the application field and working principle of the RSR020P05FRATL. This device is a voltage-controlled FET that is suitable for a wide range of applications such as power switching, amplifier circuits, and power supply circuits. Moreover, it is especially designed for high-frequency switching, making it an ideal choice for radio transmission, electronic measuring instruments and data communication systems. The device is also highly reliable and has a low on-state resistance of 0.53 Ω (ohm), as well as a low input capacitance of 0.44 pF (picofarad). The RSR020P05FRATL is packaged in a mini-mold (SOP8D) package for maximum performance and a small size, making it suitable for use in various applications and for high-density circuit designs.

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