RSY160P05TL Allicdata Electronics

RSY160P05TL Discrete Semiconductor Products

Allicdata Part #:

RSY160P05TLTR-ND

Manufacturer Part#:

RSY160P05TL

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 45V 16A TCPT3
More Detail: P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TCPT...
DataSheet: RSY160P05TL datasheetRSY160P05TL Datasheet/PDF
Quantity: 2500
2500 +: $ 0.44021
Stock 2500Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TCPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RSY160P05TL is a type of Transistor-Field Effect Transistor (FET), specifically a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single-channel device and is designed to be used as a power switch in electronic circuits and systems.

A MOSFET is a gate-controlled device that shares similarities with both a bipolar junction transistor (BJT) and a field effect transistor (FET). The source and drain (the two terminals at the ends of the channel) are connected to two distinct pieces of metal and the gate (the terminal between the source and the drain) is connected to a semiconducting material. The source and drain have opposite polarity and the gate connects them. This device works in a similar manner to a BJT, though it is different because of the use of MOSFETs’ “MOS-type” arrangement.

The RSY160P05TL is designed with an optimized P-channel, which has enhanced performance characteristics than the standard P-Channel FETs. It is capable of switching both AC-coupled and DC-coupled signals and can offer a reduction in switching times. This makes it more suitable for applications requiring high signal frequencies, such as noise-coupled amplifier stages or signal switching.

The maximum power dissipation for the RSY160P05TL is 0.4watts. This is an improved rate compared to other P-channel FETs and helps to reduce the overall power consumption of the device. Additionally, it also has high voltage and current capabilities, with a drain-to-source voltage of up to 24 volts and can handle up to 10 amperes of current.

The main application field of the RSY160P05TL is in switching circuits and amplifiers. It is often used to provide signal strength and speed up signal switching. It can be used as a power switch for amplifier stages or in signal paths that require high switching frequencies. Additionally, it is suitable for applications where noise immunity is necessary, such as in Bluetooth, wifi, and USB-boosting circuits.

The working principle of the RSY160P05TL is based on the P-Channel MOSFET. When the gate voltage is positive, the conduction from the source to the drain is allowed, allowing current to flow in the device. When the gate voltage is negative, the conduction is blocked, thus stopping the current flow.

Aside from providing a reduction in switching times, the RSY160P05TL also has features that make it more reliable in terms of noise and temperature. It has an improved gate noise level and can withstand temperatures up to 125°c. This means that the device will be able to function reliably even in extreme environments.

In conclusion, the RSY160P05TL is a powerful, efficient, and capable single-channel MOSFET device. It is most frequently used as a power switch in amplifiers and other signal-switching applications. Its optimized P-channel construction and combination of high voltage, current, and temperature capabilities allows it to be used in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RSY1" Included word is 1
Part Number Manufacturer Price Quantity Description
RSY160P05TL ROHM Semicon... 0.48 $ 2500 MOSFET P-CH 45V 16A TCPT3...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics