RTE002P02TL Discrete Semiconductor Products |
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Allicdata Part #: | RTE002P02TLTR-ND |
Manufacturer Part#: |
RTE002P02TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 0.2A SOT416 |
More Detail: | P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RTE002P02TL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
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RTE002P02TL Application Field and Working Principle
The RTE002P02TL is a unique type of transistor made for switching applications. It is a single field-effect transistor (FET) that utilizes both the drain and source for efficient operation. The RTE002P02TL is mainly used in industrial and consumer electronics such as inverters, solar generators, and power supplies.
What Are Field-Effect Transistors?
A field-effect transistor (FET) is a three-terminal, voltage-controlled semiconductor device used in a wide variety of applications. FETs are similar to bipolar transistors but are instead operated by a metal-oxide-semiconductor (MOS) capacitance, a thin layer of metal oxide which is used to create a barrier between the metal gate and the semiconductor. When a voltage is applied to the gate, it modulates the conductance through the device as it changes the width of the channel.
RTE002P02TL Features
The RTE002P02TL is unique because it features a four-terminal structure – the gate, drain, source, and well terminals. This is the only single FET device to feature a well terminal, which is used to regulate the channel conductivity and reduce power consumption. Additionally, the RTE002P02TL has a superior breakdown voltage of 6.5 V and a faster switching speed than traditional FETs.
RTE002P02TL Application Fields
Due to its four-terminal structure, the RTE002P02TL is mainly used in industrial and consumer electronics for efficient switching applications. The RTE002P02TL is especially popular in inverters, solar generators, and power supplies. In such applications, the RTE002P02TL is used to convert AC power to DC power and regulate the current output. The RTE002P02TL is also used in digital circuits, gate drives, and other high-frequency switching circuits.
How the RTE002P02TL Works
The RTE002P02TL utilizes a metal-oxide-semiconductor (MOS) capacitance between the gate and the drain and source terminals. When a voltage is applied to the gate, it changes the width of the channel and modulates the conductance between the drain and source. When current passes through the drain-source channel, it is regulated by the well terminal, allowing for efficient operation and low power consumption.
Conclusion
The RTE002P02TL is a unique type of single field-effect transistor (FET) that features a four-terminal structure for efficient operation. The RTE002P02TL is mainly used in industrial and consumer electronics, such as inverters, solar generators, and power supplies. It is also used in digital circuits, gate drives, and other high-frequency switching circuits. The RTE002P02TL utilizes a metal-oxide-semiconductor (MOS) capacitance between the gate and the drain and source terminals to regulate the current output.
The specific data is subject to PDF, and the above content is for reference
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