RTM002P02T2L Discrete Semiconductor Products |
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| Allicdata Part #: | RTM002P02T2LTR-ND |
| Manufacturer Part#: |
RTM002P02T2L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 20V 0.2A VMT3 |
| More Detail: | P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount ... |
| DataSheet: |  RTM002P02T2L Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VMT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
| Vgs (Max): | ±12V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 200mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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As a kind of Field Effect Transistor (FET), RTM002P02T2L is a vertical DFN8 package type MOSFET which can control the relatively larger current and it is used in wide working temperature. With an Rds(on) of 74mW at 4.5V as well as a low gate charge of 225nC, the RTM002P02T2L is very useful for DC/DC converter circuits, motor control, switching regulator and motor remote control.
The MOSFET acts like an electrically controlled switch which opens and closes a circuit automatically by sensing the voltage applied to its gate terminal. There are three types of discrete FETs in which the RTM002P02T2L falls into: N-channel or P-channel, Depletion or Enhancement, and Single or Dual. The RTM002P02T2L belongs to N-channel, Enhancement and Single type.
In order to illustrate the working principle of RTM002P02T2L, a simple N-channel MOSFET circuit is shown in the figure below. The source terminal is the common connection between the source and drain. When the control gate of the MOSFET is grounded, the source-drain channel is closed. As a result, no current will flow through the device. However, when the control gate is connected to a voltage source, the source-drain channel is opened and current will flow.
The RTM002P02T2L MOSFET has a wide range of applications in the RF communication field, such as amplifiers, mixers, oscillators, routers, and mobile communication devices. The MOSFET device can also be used for power management, circuits power supply, analog signal processing, and DC/DC converters in industrial applications. As RTM002P02T2L has a very low Rds(on) value and a high switching speed, it can be used as a switch in power management circuits.
Additionally, the RTM002P02T2L can be used in motor control systems and automotive applications due to its high efficiency and wide working temperature range. It can also be used in consumer electronic applications, such as computers, televisions, and mobile phones.
With its wide range of applications, RTM002P02T2L is a great choice for various electronic projects. Its high speed, low Rds(on) and wide working temperature range makes it a reliable and versatile device.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| RTM002P02T2L | ROHM Semicon... | -- | 1000 | MOSFET P-CH 20V 0.2A VMT3... |
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