RUQ050N02TR Discrete Semiconductor Products |
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| Allicdata Part #: | RUQ050N02TR-ND |
| Manufacturer Part#: |
RUQ050N02TR |
| Price: | $ 0.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 20V 5A TSMT6 |
| More Detail: | N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSM... |
| DataSheet: |  RUQ050N02TR Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.18804 |
| Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | TSMT6 (SC-95) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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Introduction
The RUQ050N02TR is a logic level N-channel enhancement mode MOSFET that is designed to operate in the 20V to 100V range. RUQ050N02TR is a high-performance device that offers low gate and drain charge, low on-state resistance and high gate thresholds. It is extremely suitable for applications such as load switch, electronic throttle control and motor drive applications.
Application field of RUQ050N02TR
The RUQ050N02TR is specially engineered for applications operating from 20V to 100V, such as load switches, electronic throttle control and motor drive applications. Here are some key features of the RUQ050N02TR that make it suitable for these applications:
- Low gate and drain charge, low on-state resistance.
- High gate threshold, which enables higher switching speeds.
- Integrated ESD protection, which prevents devices from being damaged by electrostatic discharge.
- Low gate driver power, which reduces power consumption.
- Compact layout, which helps save space.
Because of its small size, the RUQ050N02TR is an ideal solution for applications with limited space requirements. In addition, its low on-state resistance and low gate charge enable efficient performance and improved battery life. Its high gate threshold also means that the MOSFET can handle the high voltage variations common in motor drive applications.
Working principle of RUQ050N02TR
The RUQ050N02TR is a logic level N-channel enhancement mode MOSFET. Its main purpose is to control the flow of electrical current. It consists of a source, a drain, and a gate. When no voltage is applied to the gate, the MOSFET is off (aka non-conductive). When a voltage is applied to the gate, it creates an electrostatic field which “opens” the MOSFET, allowing electrical current to flow from the source to the drain.
The way the MOSFET switches is determined by two parameters, the gate threshold voltage and the gate drain voltage. The gate threshold voltage is the voltage that is applied to the gate at which the MOSFET switches on. The gate drain voltage is the voltage that is applied to the gate at which the MOSFET switches off. The RUQ050N02TR has a gate threshold voltage of 3.2V and a gate drain voltage of 4.7V.
The RUQ050N02TR also has an integrated ESD protection to prevent damage from electrostatic discharge. This helps protect the device from unwanted power surges.
Conclusion
RUQ050N02TR is a logic level N-channel enhancement mode MOSFET designed to operate in the 20V to 100V range. Its small size, low on-state resistance, low gate charge, high gate thresholds and integrated ESD protection make it ideal for applications such as load switch, electronic throttle control, and motor drive applications. The RUQ050N02TR’s working principle is based on the voltage applied to the gate, which switches the MOSFET on or off.
The specific data is subject to PDF, and the above content is for reference
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| RUQ050N02TR | ROHM Semicon... | 0.21 $ | 1000 | MOSFET N-CH 20V 5A TSMT6N... |
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