RUU002N05T106 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 1mA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	25pF @ 10V
Vgs (Max):	±8V
Series:	--
Rds On (Max) @ Id, Vgs:	2.2 Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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RUU002N05T106 is a N-Channel Enhancement Mode MOSFET transistor that is often used as a switch in various electronic control systems. It can provide up to 30A current and can handle a maximum voltage of 30V. It is a low cost, low-voltage, high-current, and fast-switching device that is widely used in the modern electronics industry.The RUU002N05T106 is designed to have an ultra-low input capacitance, high-slew rate, reverse leakage current, fast switching speed, and low on-resistance. It is well-suited for switching high-current loads at high frequencies with minimal losses. It is an ideal choice for power conversion applications, such as AC/DC converters, DC/DC converters, motor control, lighting control, and more.The RUU002N05T106 is a N-channel MOSFET transistor with two leads for access, one for the source and one for the drain. For the device to be activated, the gate lead must be supplied with a voltage. When the voltage applied on the gate is higher than the threshold voltage, the drain and source region of the device will be connected and allow current to flow from the source to the drain.The working principle of the RUU002N05T106 is based on the interface between the source and the drain. This interface is known as the channel and is formed by the N-type material used in the construction of the device. When the gate voltage is applied, it creates an electric field that changes the shape of the channel, allowing current to flow from the source to the drain. The amount of current allowed to flow is determined by the gate voltage applied to the device.The RUU002N05T106 can be used in a variety of ways depending on the application. It can be used as a switch to control the current flow, or it can be used as a current amplifier to increase the output current of a DC source. Additionally, it can be used to protect a circuit from high voltages, suppress electrical noise, and provide an adjustable current source. The device is also well-suited for use in switching power supplies, motor control, and other high-current applications.In conclusion, the RUU002N05T106 is a low cost, low voltage, high current, and fast-switching device that offers a variety of applications in the modern electronics industry. It is an ideal choice for a variety of power management, signal conditioning, and control applications. The device is designed to have an ultra-low input capacitance, high slew rate, reverse leakage current, fast switching speed, and low on-resistance. These features make the RUU002N05T106 a great choice for power conversion and motor control projects, as well as many other high-current switching applications.

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