
RV2C014BCT2CL Discrete Semiconductor Products |
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Allicdata Part #: | RV2C014BCT2CLTR-ND |
Manufacturer Part#: |
RV2C014BCT2CL |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 700MA DFN1006 |
More Detail: | P-Channel 20V 700mA (Ta) 400mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.08000 |
10 +: | $ 0.07760 |
100 +: | $ 0.07600 |
1000 +: | $ 0.07440 |
10000 +: | $ 0.07200 |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | DFN1006-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 1.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RV2C014BCT2CL is an advanced FET (Field Effect Transistor) which can be used in many different applications. It is a Single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a type of transistor that is commonly used in many applications that involve electronic power and control. In order to understand the working principle and the application field of this type of advanced FET, it is useful to first understand the basics of FETs and their application field.
A FET is an electronic device with a three-dimensional structure. It consists of two or more layers of semiconducting material that are insulated from each other. The general purpose of a FET is to amplify electrical signals and control the power and current. In order to do this, the FET has the ability to transport current from one layer to another depending on signals which are applied to its external terminals. The two main types of FETs are Enhancement Type and Depletion Type. Enhancement Type FETs work by increasing current flow through the device, while Depletion Type FETs reduce current flow through the device.
The RV2C014BCT2CL is a Single MOSFET, which means that it is composed of a single gate. Single MOSFETs are most commonly used for low-power and low-voltage applications due to their low device voltage, and can be found in many electronic devices such as cell phones, computers, and automotive components. Single MOSFETs also have a lower resistance and higher switching speed than multiple gate devices, which makes them ideal for high speed applications.
The working principle of the RV2C014BCT2CL Single MOSFET is to modulate the resistance between its drain and source. This is achieved by applying an external voltage to its gate, which in turn modulates the resistance between its drain and source. This allows the RV2C014BCT2CL to act as either an amplifier, an electrically operated switch, or a voltage-controlled voltage source. The RV2C014BCT2CL can also be used in applications where high-speed switching is required, as its switching speed is much higher than that of other FETs.
The RV2C014BCT2CL is most commonly used in low-power and low-voltage applications, such as signal processing, data processing, linear or nonlinear signal amplification, and signal control. The device can also be used in higher power and higher voltage applications, such as power amplifiers, power supply control, lighting systems, and motor control. Additionally, the RV2C014BCT2CL\'s ability to modulate the resistance between its drain and source makes it a useful device for analog signal processing and signal conditioning.
In conclusion, the RV2C014BCT2CL Single MOSFET is a versatile and advanced device which can be used in various low-power and high-power applications. Its ability to modulate the resistance between its drain and source, combined with its high speed switching ability, make it well-suited for a wide range of applications. Its ability to be used in high-power and high-voltage applications makes it an attractive option for many different types of electronic devices.
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