RV3C002UNT2CL Allicdata Electronics

RV3C002UNT2CL Discrete Semiconductor Products

Allicdata Part #:

RV3C002UNT2CLTR-ND

Manufacturer Part#:

RV3C002UNT2CL

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NCH 20V 150MA SM SIG MOSFET, VML
More Detail: N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount ...
DataSheet: RV3C002UNT2CL datasheetRV3C002UNT2CL Datasheet/PDF
Quantity: 8000
8000 +: $ 0.07627
16000 +: $ 0.07135
24000 +: $ 0.06544
Stock 8000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 2 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
FET Feature: --
Power Dissipation (Max): 100mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VML0604
Package / Case: 3-XFDFN
Description

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The RV3C002UNT2CL is a type of transistor, specifically known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single-channel device, meaning it is designed for the switching of a single-channel signal and its drain-source voltage can reach up to 30V. This device is well-suited for a variety of applications, from high-speed switching applications to low-noise analog circuits.

MOSFETs contain three terminals, the source, the gate, and the drain. The source and the drain form the "channel". The source is supplied with either the positive or negative voltage of the circuit and the drain leads to the load. The gate creates an insulated channel in between the source and the drain, which can be modulated to control the flow of current through the source-drain cycle. It can be thought of as an electronically controlled analog switch.

The RV3C002UNT2CL MOSFET works by using a voltage difference between the gate and the source to form an electron depletion layer, which acts as an insulator. When the gate voltage is raised, this depletion layer becomes larger and the current between the source and the drain is restricted. The gate voltage effectively acts like a variable resistor, controlling the amount of current that can flow between the source and the drain.

By manipulating the voltage of the gate, the current from the source to the drain can be efficiently controlled, making MOSFETs very versatile and useful for many different applications. One of the most popular applications for MOSFETs is as a switch, particularly for high-power applications, as the MOSFET can handle high input powers without compromising its performance. MOSFETs can also be used as amplifiers, allowing the signal to be amplified while controlling the amount of current flowing through the circuit.

Another way in which MOSFETs are incredibly useful is due to their high input impedance, which reduces the amount of power the device needs to operate. This makes them ideal for low-power applications and helps to reduce heat generation and power consumption.

The RV3C002UNT2CL is a great choice for applications that require a reliable and robust switching device. Its high input impedance and low power consumption make it a versatile choice for both analog and digital applications. Its drain-source voltage can reach up to 30V and it can handle high input powers without compromising its performance, making it well-suited for high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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