RV3C002UNT2CL Discrete Semiconductor Products |
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Allicdata Part #: | RV3C002UNT2CLTR-ND |
Manufacturer Part#: |
RV3C002UNT2CL |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 20V 150MA SM SIG MOSFET, VML |
More Detail: | N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | RV3C002UNT2CL Datasheet/PDF |
Quantity: | 8000 |
8000 +: | $ 0.07627 |
16000 +: | $ 0.07135 |
24000 +: | $ 0.06544 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 12pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 100mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VML0604 |
Package / Case: | 3-XFDFN |
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The RV3C002UNT2CL is a type of transistor, specifically known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single-channel device, meaning it is designed for the switching of a single-channel signal and its drain-source voltage can reach up to 30V. This device is well-suited for a variety of applications, from high-speed switching applications to low-noise analog circuits.
MOSFETs contain three terminals, the source, the gate, and the drain. The source and the drain form the "channel". The source is supplied with either the positive or negative voltage of the circuit and the drain leads to the load. The gate creates an insulated channel in between the source and the drain, which can be modulated to control the flow of current through the source-drain cycle. It can be thought of as an electronically controlled analog switch.
The RV3C002UNT2CL MOSFET works by using a voltage difference between the gate and the source to form an electron depletion layer, which acts as an insulator. When the gate voltage is raised, this depletion layer becomes larger and the current between the source and the drain is restricted. The gate voltage effectively acts like a variable resistor, controlling the amount of current that can flow between the source and the drain.
By manipulating the voltage of the gate, the current from the source to the drain can be efficiently controlled, making MOSFETs very versatile and useful for many different applications. One of the most popular applications for MOSFETs is as a switch, particularly for high-power applications, as the MOSFET can handle high input powers without compromising its performance. MOSFETs can also be used as amplifiers, allowing the signal to be amplified while controlling the amount of current flowing through the circuit.
Another way in which MOSFETs are incredibly useful is due to their high input impedance, which reduces the amount of power the device needs to operate. This makes them ideal for low-power applications and helps to reduce heat generation and power consumption.
The RV3C002UNT2CL is a great choice for applications that require a reliable and robust switching device. Its high input impedance and low power consumption make it a versatile choice for both analog and digital applications. Its drain-source voltage can reach up to 30V and it can handle high input powers without compromising its performance, making it well-suited for high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RV3C002UNT2CL | ROHM Semicon... | 0.08 $ | 8000 | NCH 20V 150MA SM SIG MOSF... |
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