RVQ040N05TR Discrete Semiconductor Products |
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| Allicdata Part #: | RVQ040N05TR-ND |
| Manufacturer Part#: |
RVQ040N05TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 45V 4A TSMT6 |
| More Detail: | N-Channel 45V 4A (Ta) 600mW (Ta) Surface Mount TSM... |
| DataSheet: |  RVQ040N05TR Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 45V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 53 mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 5V |
| Vgs (Max): | 21V |
| Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 600mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TSMT6 (SC-95) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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The RVQ040N05TR transistor is a part of the single MOSFETs family. The term MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. This particular type of transistor is widely used in a variety of applications and has a unique working principle.
The RVQ040N05TR is a highly efficient transistor with a power rating of 0.4 V and a current rating of 5 A. It is capable of handling high-current applications and is designed to provide reliable performance in long-term use. The RVQ040N05TR has a wide range of applications, including in communications electronics, automotive electronics, DC-DC converters, and power supplies.
The RVQ040N05TR transistor works by creating an electric field between the Gate and the source/drain. This electric field is created by applying a voltage between the Gate and source/drain. The greater the voltage difference between the Gate and source/drain, the greater the electric field created. This electric field is then used to regulate the flow of current between the source/drain.
When a voltage is applied to the Gate, the electrons are repelled away from the Gate and attracted to the source/drain. This creates a depletion region in the Gate that prevents current from flowing. When the voltage on the Gate is reduced, the depletion region disappears and the current can flow between the source/drain. The voltage on the Gate is used to regulate the current flow between the source/drain and can create an increase or decrease in current.
The RVQ040N05TR transistor is widely used in a variety of applications due to its reliable performance and wide range of power ratings. It is often used in high-current applications like DC-DC converters and power supplies. The RVQ040N05TR can also be used in communications electronics, automotive electronics, and other electronics applications.
The RVQ040N05TR is a reliable and efficient transistor that is used in a variety of applications. It has a powerful rating of 0.4 V and a current rating of 5 A, making it capable of handling high-current applications. The RVQ040N05TR works by creating an electric field between the Gate and the source/drain that can be used to regulate the flow of current between them. This makes the RVQ040N05TR an ideal choice for a variety of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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