RW1C026ZPT2CR Discrete Semiconductor Products |
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Allicdata Part #: | RW1C026ZPT2CRTR-ND |
Manufacturer Part#: |
RW1C026ZPT2CR |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 2.5A WEMT6 |
More Detail: | P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6... |
DataSheet: | RW1C026ZPT2CR Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06121 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WEMT |
Package / Case: | SOT-563, SOT-666 |
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The RW1C026ZPT2CR is a special type of FET, otherwise known as a field-effect transistor. It is the most common form of FET, and it has become the most popular for many industrial, medical, and consumer electronic applications. It is available in various package types, and its features a low voltage and low on-resistance for improved efficiency.
A Field Effect Transistor (FET) is a three-terminal device with a source, drain and gate. The energy from the source is blocked from the drain via a thin layer of “gate” material. This gate is a semiconductor dielectric material, typically having a thickness of just a few atoms. This layer effectively creates a “barrier” between the source and drain, allowing or blocking current flow depending on the applied voltage on the gate.
The RW1C026ZPT2CR FET is a silicon, N-channel MOSFET that can be used for switching and amplifying electronic signals. It has a low on-state resistance (RDS(ON)) of just 26 mOhms, allowing it to handle up to 2A sustained current and up to 180A pulse current. It also has an operating temperature rating of -55°C to 175°C. This makes it ideal for applications that require higher heat or extended temperature ranges, such as automotive or appliance use.
The RW1C026ZPT2CR FET is also typically used in power management, such as switching converters with high efficiency (95% +). It is also suitable for high-side switching and backlight control applications. It can also be used in Class-D and Class-AB audio amplifiers and low noise power supplies, to name a few.
The working principle of this FET essentially relies on its control gate, which is essentially a voltage-controlled switch. Operating voltage can be applied to the gate of the FET and this creates a “barrier” between the source and drain. A higher voltage will cause a conductive channel between the source and drain, allowing current to pass. The higher the gate voltage, the higher the current capability and the lower the on-resistance.
Given its features and capabilities, the RW1C026ZPT2CR FET is a very versatile and widely used FET in many different applications where increased heat or extended temperature ranges are necessary. It is widely used in consumer electronics, automotive, industrial, and medical applications. And given its low resistance and high current ratings, it is ideal for power management and high-side switching.
The specific data is subject to PDF, and the above content is for reference
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