RW1C026ZPT2CR Allicdata Electronics

RW1C026ZPT2CR Discrete Semiconductor Products

Allicdata Part #:

RW1C026ZPT2CRTR-ND

Manufacturer Part#:

RW1C026ZPT2CR

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 20V 2.5A WEMT6
More Detail: P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: RW1C026ZPT2CR datasheetRW1C026ZPT2CR Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06121
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WEMT
Package / Case: SOT-563, SOT-666
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RW1C026ZPT2CR is a special type of FET, otherwise known as a field-effect transistor. It is the most common form of FET, and it has become the most popular for many industrial, medical, and consumer electronic applications. It is available in various package types, and its features a low voltage and low on-resistance for improved efficiency.

A Field Effect Transistor (FET) is a three-terminal device with a source, drain and gate. The energy from the source is blocked from the drain via a thin layer of “gate” material. This gate is a semiconductor dielectric material, typically having a thickness of just a few atoms. This layer effectively creates a “barrier” between the source and drain, allowing or blocking current flow depending on the applied voltage on the gate.

The RW1C026ZPT2CR FET is a silicon, N-channel MOSFET that can be used for switching and amplifying electronic signals. It has a low on-state resistance (RDS(ON)) of just 26 mOhms, allowing it to handle up to 2A sustained current and up to 180A pulse current. It also has an operating temperature rating of -55°C to 175°C. This makes it ideal for applications that require higher heat or extended temperature ranges, such as automotive or appliance use.

The RW1C026ZPT2CR FET is also typically used in power management, such as switching converters with high efficiency (95% +). It is also suitable for high-side switching and backlight control applications. It can also be used in Class-D and Class-AB audio amplifiers and low noise power supplies, to name a few.

The working principle of this FET essentially relies on its control gate, which is essentially a voltage-controlled switch. Operating voltage can be applied to the gate of the FET and this creates a “barrier” between the source and drain. A higher voltage will cause a conductive channel between the source and drain, allowing current to pass. The higher the gate voltage, the higher the current capability and the lower the on-resistance.

Given its features and capabilities, the RW1C026ZPT2CR FET is a very versatile and widely used FET in many different applications where increased heat or extended temperature ranges are necessary. It is widely used in consumer electronics, automotive, industrial, and medical applications. And given its low resistance and high current ratings, it is ideal for power management and high-side switching.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RW1C" Included word is 4
Part Number Manufacturer Price Quantity Description
RW1C015UNT2R ROHM Semicon... 0.13 $ 1000 MOSFET N-CH 20V 1.5A WEMT...
RW1C025ZPT2CR ROHM Semicon... -- 8000 MOSFET P-CH 20V 2.5A WEMT...
RW1C026ZPT2CR ROHM Semicon... 0.07 $ 1000 MOSFET P-CH 20V 2.5A WEMT...
RW1C020UNT2R ROHM Semicon... 0.15 $ 1000 MOSFET N-CH 20V 2A WEMT6N...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics