RZE002P02TL Discrete Semiconductor Products |
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Allicdata Part #: | RZE002P02TLTR-ND |
Manufacturer Part#: |
RZE002P02TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 0.2A EMT3 |
More Detail: | P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RZE002P02TL Datasheet/PDF |
Quantity: | 66000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
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RZE002P02TL is a single N-type field effect transistor (FET) that comes in an easy-to-use surface-mount package. It is a discrete device intended for use in a variety of analog, digital and switched-mode power applications. This device has been designed to provide high power levels, low current conduction and low EMI/RFI generation.
The RZE002P02TL has a 2A continuous drain current which is ideal for power supply applications. The maximum drain-source voltage (Vds) is 265V, making this device suitable for use in AC/DC conversion and motor drive systems. Its Gate threshold voltage is rated at 5V, with a maximum voltage (Vgs) of +30V, allowing it to be used in a variety of Q switch applications. The device has a maximum power dissipation of 28Watts and an on-resistance of 0.02 Ω, making it suitable for low power applications as well.
In terms of its working principle, the RZE002P02TL uses the voltage from the gate to control the flow of current from the source to the drain, as a function of the gate-source voltage as well as the geometry of the semiconductor material. When the gate-source voltage is positive (Vgs > Vth) the device will be switched on and the current between the source and drain (ID) will be proportional to the gate-source voltage, Vgs. When the voltage at the gate is zero, or negative (Vgs < Vth) the device will be turned off and no current will flow between the source and the drain. The device exhibits an exponential variation of the drain-source leakage current with temperature, which means that the protection circuits should be properly designed to take temperature changes into account.
The RZE002P02TL is used in a variety of applications ranging from power supply and automotive control to low noise line-level signal amplification and switching. In power supply applications, it can be used for Qswitch control and for output impedance matching. In automotive applications, the RZE002P02TL can be used for speed control of fans and pumps. In low-noise signal amplification and switching, the low on-resistance and fast switching speed of this device makes it suitable for use in audio amplifiers and switching circuits.
In summary, the RZE002P02TL is a single N-type field effect transistor that comes in an easy-to-use surface-mount package. It has a 2A continuous drain current and a maximum drain-source voltage of 265V. It works by using the voltage from the gate to control the flow of current from the source to the drain, as a function of the gate-source voltage. It is used in a variety of applications ranging from power supply and automotive control to low noise line-level signal amplification and switching.
The specific data is subject to PDF, and the above content is for reference
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