RZL035P01TR Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	36 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	1940pF @ 6V
FET Feature:	--
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TUMT6
Package / Case:	6-SMD, Flat Leads

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RZL035P01TR is a advanced single-discrete surface mount MOSFET device used in a wide variety of applications. Its structure consists of a MOSFET in N-channel enhancement mode. It has a fantastic combination of on-state resistance and avalanche characteristics. This device is manufactured in a plastic package using advanced CMOS technology. The easy mount construction provides improved thermal performance and eliminates the need for complex soldering. This device is a great choice for applications where board real estate is at a premium, such as in high-desnity Hi-power analog circuits, high-speed switches and many other high-density circuit applications.This device has a variety of features. It has high-level ESD protection on all pins, enhanced avalanche energy capability, low on-state resistance, improved thermal characteristics and high voltage capability. Additionally, the RZL035P01TR has low gate-source leakage current, low capacitance and high speed switching. This device is suitable for a wide range of board applications, including high-power audio switching, temperature control or bias circuits, and general purpose switching. RZ035P01TR is designed for high-density analog circuits and other general purpose switching applications. This device is designed to operate at a reference source/drain voltage of up to 100 volts and can handle a maximum dissipation of up to 4 watts. Its RDS(on) is rated at 0.12-0.18 ohms, with an Avalanche energy of up to a maximum of 8 mJ. It has a gate threshold voltage of 2 V and a gate-source voltage of –1.5 V to 6 V. The device also has a maximum operating temperature of 150°C, and is available in both standard and added-suffix packages. The working principle of RZL035P01TR MOSFET device is based on the build up of a potential barrier between source and drain. A small input gate voltage is applied to the MOSFET and this gate voltage creates an electric field between source and drain which helps control the flow of electric current from the source to the drain. As the gate voltage increases the barrier created between source and drain decreases and the electric current from source to drain increases, thus resulting in an increase in the output voltage, depending on the voltage rating of the MOSFET. RZL035P01TR is designed for high-density analog circuits, such as high-power audio switching and temperature control or bias circuits. It is also suitable for use in other general switching applications, such as DC-DC converters, PWM circuits, power transmission systems and power supplies. Due to its high-level ESD protection on all pins, excellent on-state resistance and enhanced avalanche energy capabilities, this device offers improved performance and reliability when compared to conventional MOSFETs. The RZL035P01TR is an advanced single-discrete surface mount MOSFET device. It offers excellent performance and reliability in a wide range of applications. Its features include an improved thermal performance, high peak drain current, enhanced avalanche energy capability, low on-state resistance, and high voltage capability. With its easy mount construction and wide operating temperature range, it is an ideal solution for high-density analog circuits and other general switching applications.

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