RZY200P01TL Discrete Semiconductor Products |
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Allicdata Part #: | RZY200P01TLTR-ND |
Manufacturer Part#: |
RZY200P01TL |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 20A TCPT3 |
More Detail: | P-Channel 12V 20A (Ta) 20W (Tc) Surface Mount TCPT... |
DataSheet: | RZY200P01TL Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.49701 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±10V |
FET Feature: | -- |
Power Dissipation (Max): | 20W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TCPT3 |
Package / Case: | 3-SMD, Flat Leads |
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RZY200P01TL is a field effect transistor (FET) specifically designed for low power high temperature applications. It is a single-gate insulated-gate FET (MOSFET) that can be used as a part of an inverter, gate driver, or power rectifier. It has many different uses, such as providing high-voltage switchable devices for power amplification and power conversion applications.
RZY200P01TL has been specifically designed to provide a tiny footprint and yet still offer high efficiency operation. This means that users can save valuable space on their circuit boards. It also offers excellent temperature stability and lower equivalent on-resistance (RDSon). This makes it one of the best choices for high-temperature and low-power applications.
The RZY200P01TL has a low-gate capacitance, making it a good choice for high-bandwidth operations. It also has low input capacitance, resulting in reduced switching noise. This feature is advantageous when used in switching, rectification, and modulation applications.
When it comes to the working of the RZY200P01TL, it operates on the principle of a gate-controlled current flow. This principle is based on the establishment of a potential difference between the source and the drain of the transistor. When the gate is open, the current is allowed to flow through the transistor while if the gate is closed, it stops all current flow and the transistor then stays in its “off” state. This is a very simple but effective principle that can be used in many applications.
The RZY200P01TL can be used as a part of a power rectifier. For this purpose, it is necessary to connect the drain and source together, and then connect the output cable to the power supply input on the rectifier. The gate then has to be connected to the control voltage, and it will start to operate when it is supplied with the correct voltage level. This allows the power rectifier to be able to switch on and off without having to manually adjust the voltage level.
The RZY200P01TL is an important component of the power supply of many consumer electronics, such as laptops, mobile phones, and other gadgets. It can be used to regulate power and make sure that devices are not damaged by too much current or an excessive potential difference. It is also used in the design of power amplifiers and power inverters.
In short, the RZY200P01TL is a single-gate insulated-gate Field Effect Transistor (FET) that has the unique capability of working at both high and low temperatures. This makes it an ideal choice for a wide range of applications, from power rectifiers and amplifiers to gate drivers and power converters. Due to its low gate capacitance and high temperature stability, it is a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RZY200P01TL | ROHM Semicon... | 0.55 $ | 1000 | MOSFET P-CH 12V 20A TCPT3... |
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