S1M M2G Allicdata Electronics
Allicdata Part #:

S1MM2G-ND

Manufacturer Part#:

S1M M2G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 1000V 1A DO214AC
More Detail: Diode Standard 1A Surface Mount DO-214AC (SMA)
DataSheet: S1M M2G datasheetS1M M2G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02969
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Single-phase medium-frequency magnetic field (S1M M2G) technology has been a major force of communication and guidance in the modern world in its newfound application field, bringing us closer to nature through the use of science to solve many of the day-to-day challenges we face. It uses the behavior of electromagnetic fields to help guide, target and transfer information, suppress interference, and provide conversion paths between communications systems and integrated circuits (ICs). The technology can be used for a range of purposes, from navigation and navigation correction, to detection and ranging, communications antenna design and RFID applications. This article will focus on the application field and working principle of S1M M2G.

This single-phase medium-frequency magnetic field technology is based on the well-known Hall effect, which is the creation of an electrical field when a magnetic field is placed perpendicularly to the flow of electric current. Diffeiring from traditional diodes made of semiconductor materials, S1M M2G diodes are made of a single ferromagnetic material sheet and a semiconductor material layer. When an alternating current supply is connected to the ferromagnetic sheet, a magnetic field is generated which in turn the Hall effect is large enough to create a significant electrical field. This electrical field is effectively a diode which enables rectification of the current, allowing a one-directional flow of current suitable for many telecommunications and guidance applications.

S1M M2G rectifiers also include a current protection feature. This is important as the intense Hall effect magnetic field generated by the single ferromagnetic sheet can cause excessive current to flow through the diodes, leading to possible damage. To aid with this, the current protection feature acts as a thermal fuse and monitors the device’s internal temperature. When this temperature limit is met, a shunting process is triggered where surplus current is sent to the ground, reducing the risk of overcapacity or overload.

The two main applications of S1M M2G technology are in telecommunications and navigation guidance systems. In telecommunications, these diodes are used to connect various pieces of equipment in order to transfer digital signals. The technology is able to ensure that no errors occur in the transmission of information and also allow ICs to be connected to devices such as mobile phones. The diodes are also used to provide navigation corrections to PN-codes, a common technique used in global navigation systems. The diodes can provide efficient tracking and range information. Finally, RFID based applications use the S1M M2G technology to provide near-field communication links between two devices.

The S1M M2G application field further extends to automotive industries, where these locomotives formed by two ferromagnetic materials and semiconductor materials sheets also can use the Hall effect to detect objects and make adjustments on their own. This helps to reduce maintenance work and provide a safer environment for drivers and passengers. The technology can also be used in satellites, where the grid-shaped S1M M2G rectifiers assists in making the long-distance communications links reliable and efficient. In addition, the rectifiers provide an electromagnetic force that contributes to the satellite\'s rotation.

At the heart of the S1M M2G technology lies the concept of the Hall effect. It is a fundamental physical observation that states that when a magnetic field is placed perpendicularly to a current-carrying conductor, a voltage difference is created across the conductor proportional to the strength of the magnetic field. This phenomenon can be observed not only in solid conducting materials, but also in microelectronic and nanoelectronic devices. Because of this, the S1M M2G diodes are able to provide rectification, current protection and communication capabilities with dependable reliability.

S1M M2G application field and working principle covers a wide array of areas. From providing guidance and navigation services, to protecting against excess current, the single-phase medium-frequency magnetic field technology is sure to play an increasing role in our everyday lives. It is a remarkable technology that has set the stage for further advancements in this field, pushing the boundaries of what communication and navigation systems can do.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "S1M " Included word is 40
Part Number Manufacturer Price Quantity Description
E6L-S1M-1 475 Omron Automa... 85.55 $ 1000 LINEAR ENCODER SCALE
S1MLHM2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 1000V 1A S...
S1MA-E3/5AT Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 1A DO2...
S1MB-13-F Diodes Incor... -- 261000 DIODE GEN PURP 1KV 1A SMB...
S1MHE3/5AT Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 1A DO2...
S1ML MQG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1M ON Semicondu... 0.04 $ 262500 DIODE GEN PURP 1KV 1A SMA...
S1M M2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 1000V 1A D...
S1MFSHMWG Taiwan Semic... 0.05 $ 7000 DIODE, 1A, 1000V, AEC-Q10...
S1M-E3/5AT Vishay Semic... -- 15000 DIODE GEN PURP 1KV 1A DO2...
HORNET-S1M 62.19 $ 5 1 CH REMOTE CONTROL SYS 2...
S1MHE3_A/H Vishay Semic... -- 1000 DIODE GEN PURP 1KV 1A DO2...
S1ML RTG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1M-TP Micro Commer... 0.0 $ 1000 DIODE GEN PURP 1KV 1A DO2...
S1MB R5G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 1000V 1A D...
S1MBHM4G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 1000V 1A D...
S1MLS RVG Taiwan Semic... 0.04 $ 9000 DIODE GEN PURP 1KV 1.2A S...
S1ML RUG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1ML M2G Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1M-M3/61T Vishay Semic... 0.04 $ 1000 DIODE GPP 1A 1000V DO-214...
S1MLHRTG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 1000V 1A S...
S1M-E3/61T Vishay Semic... -- 84600 DIODE GEN PURP 1KV 1A DO2...
S1MFS MXG Taiwan Semic... 0.04 $ 1000 DIODE, 1A, 1000V, SOD-128...
S1MFSHMXG Taiwan Semic... 0.04 $ 1000 DIODE, 1A, 1000V, AEC-Q10...
S1MA-E3/61T Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 1A DO2...
S1MLSHRVG Taiwan Semic... 0.04 $ 3000 DIODE GEN PURP 1KV 1.2A S...
S1MLHRUG Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 1000V 1A S...
S1MLW RVG Taiwan Semic... 0.04 $ 9000 DIODE GEN PURP 1KV 1A SOD...
S1MDFQ-13 Diodes Incor... 0.06 $ 1000 DIODE GEN PURP 1KV 1A DFL...
S1M-LTP Micro Commer... 0.04 $ 1000 DIODE GEN PURP 1KV 1A DO2...
S1M2F Thomas Resea... 0.0 $ 1000 QUICK INSTALL SPLITTER 1 ...
S1M-13-F Diodes Incor... -- 280000 DIODE GEN PURP 1KV 1A SMA...
S1MFP ON Semicondu... 0.06 $ 1000 DIODE GP 1000V 1.2A SOD-1...
S1ML RVG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1MB-13 Diodes Incor... 0.0 $ 1000 DIODE GEN PURP 1KV 1A SMB...
S1MSWF-7 Diodes Incor... -- 1000 DIODE GEN PURP 1KV 1A SOD...
S1ML RFG Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 1000V 1A S...
S1MSWFQ-7 Diodes Incor... 0.07 $ 1000 DIODE GEN PURP 1KV 1A SOD...
S1M R3G Taiwan Semic... 0.04 $ 3600 DIODE GEN PURP 1KV 1A DO2...
S1MHM2G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 1000V 1A D...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics