S26KL512SDABHA020 Allicdata Electronics
Allicdata Part #:

S26KL512SDABHA020-ND

Manufacturer Part#:

S26KL512SDABHA020

Price: $ 7.94
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL 24FBGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100...
DataSheet: S26KL512SDABHA020 datasheetS26KL512SDABHA020 Datasheet/PDF
Quantity: 274
1 +: $ 7.21350
Stock 274Can Ship Immediately
$ 7.94
Specifications
Series: Automotive, AEC-Q100, HyperFlash™ KL
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Access Time: 96ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)
Description

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Memory

S26KL512SDABHA020 is a popular Random Access Memory (RAM) chip type produced by Samsung, a well-known manufacturer of memory storage products. Utilizing the company\'s high-speed, high-performance semiconductor technology, the chip is designed to provide a large storage capacity and high-throughput potential for a wide range of applications. This article will explore the application field and working principle of the S26KL512SDABHA020.

Application Field

The S26KL512SDABHA020 is designed to be used primarily as DRAM (dynamic random access memory) for various computer applications, such as main memory for video game consoles, servers and workstations. It is also used in graphics and multimedia applications, where fast access and high resolution are necessary. Additionally, the chip is used as data storage in mobile phones, as well as in automotive, industrial and medical applications.

Working Principle

The S26KL512SDABHA020 is a volatile memory device, which means that the contents of the memory are lost when the power is switched off for any reason. However, the chip is designed to read and write information extremely quickly, producing an impressive throughput potential. This is achieved by utilizing a two-stage pipeline, in which data can be written while the other stage of the pipeline is busy reading data. This reduces the amount of time wasted during reading and writing, resulting in an improved overall throughput.

The chip also contains an array of memory cells, divided into four banks, which the controller can access in parallel. This allows the chip to load or store data from or to each bank simultaneously, improving data access speed and further increasing throughput potential. Additionally, the chip contains dedicated logic for error correction and data protection, allowing for reliable operation under any conditions.

The S26KL512SDABHA020 is a powerful and reliable memory chip, capable of making an invaluable contribution to any computing system. Its wide application field and impressive throughput potential, combined with high reliability and memory protection features, make it one of the most popular memory chips on the market today.

The specific data is subject to PDF, and the above content is for reference

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