S26KS512SDGBHN030

Series:	HyperFlash™ KS
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	--
Access Time:	96ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-VBGA
Supplier Device Package:	24-FBGA (6x8)

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S26KS512SDGBHN030 Memory Application Field and Working PrincipleThe S26KS512SDGBHN030 is a type of integrated circuit (IC) memory that is able to hold data. It can be used in a wide range of applications, ranging from microprocessors to embedded systems. The S26KS512SDGBHN030 is a reliable and cost-effective memory solution that is suitable for a variety of applications.This type of memory is based on a single transistor memory (STM) cell, which is able to store two bits of data. This is known as a multi-layer cell (MLC) technology, as it can store multiple bits in a single cell. The S26KS512SDGBHN030 uses a 1T-1C memory architecture to offer performance that is up to 8 times faster than a 2T-1C technology. The memory is also able to maintain high data integrity, with a bit error rate of 1 in 10⁹¹.The S26KS512SDGBHN030 memory is designed for use in a wide range of applications, including consumer electronics, automotive, industrial, and medical. It can be used in a variety of devices, such as computers, tablets, and smartphones. It can also be used as an external memory for hard drives and flash memory devices.As well as its uses in consumer electronics, the S26KS512SDGBHN030 is also suitable for use in industrial applications. It can be used in programmable logic controllers (PLCs), data acquisition systems (DAS), and other embedded systems. The memory can also be used in digital signage, medical devices, and robotics, among other applications. The S26KS512SDGBHN030 memory works using non-volatile Flash memory technology. This means that the data stored in the memory can be retained even when the power is lost. The data is stored in cells that are composed of floating gate transistors, which are analogous to capacitors when storing charge.When the memory is powered up, the charge stored in the transistors is measured and used to determine whether the data is a 0 or a 1. This allows the memory to quickly and reliably read and write data.The S26KS512SDGBHN030 memory uses a multi-layer cell (MLC) technology to offer a reliable and cost-effective memory solution. It offers higher densities than conventional memory and can be used in a variety of applications, including consumer electronics and industrial applications. The memory offers excellent reliability and performance, with a bit error rate of 1 in 10⁹¹.

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