S26KL128SDABHB023 Allicdata Electronics
Allicdata Part #:

S26KL128SDABHB023-ND

Manufacturer Part#:

S26KL128SDABHB023

Price: $ 3.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 100MHZ
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 100...
DataSheet: S26KL128SDABHB023 datasheetS26KL128SDABHB023 Datasheet/PDF
Quantity: 1000
2500 +: $ 2.95379
Stock 1000Can Ship Immediately
$ 3.25
Specifications
Series: Automotive, AEC-Q100, HyperFlash™ KL
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Access Time: 96ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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S26KL128SDABHB023 Memory Application Field and Working Principle

S26KL128SDABHB023 memory is built on advanced process technology, which is a high-performance, low-power and small-package non-volatile memory from Infineon Technologies. It is designed as an embedded memory solution for various applications. It is built with innovative process technologies such as advanced self-refresh (ASR) memory, programmable and on-chip features. This clearly points to its potential to address a wide range of end-users’ needs.

Application Fields

S26KL128SDABHB023 memory is mainly used for applications requiring reliable data storage such as automotive, industrial and consumer electronics, including -

  • Automotive applications, such as Airbag controller, ECU, Airworthiness controller, etc.
  • Industrial applications, such as motor control, industrial automation and process control, etc.
  • Consumer electronics applications, such as medical equipment, TV and Hi-Fi, etc.

Working Principle

The S26KL128SDABHB023 memory is a write-once memory, where users can write and store data onto it one time and the data will stay there forever, regardless of power off or system reset. Once written, the data cannot be erased or changed. This non-volatile memory chip from Infineon Technologies uses a combinational logic, 8-bit to 10-bit analog-to-digital conversion, and a power-down protection circuit. The memory is built with seven register controlled or set-dense blocks, each comprises 16K x 8 bits.

The programmable operation modes of the S26KL128SDABHB023 memory provide designers the flexibility to fine-tune the memory. This memory chip has an advanced self-refresh (ASR) feature for lower power consumption, hence better economic efficiency. In addition, it offers an extended power-off life of up to 10 years with a supply voltage range of 1.8V.

The programmable address latch mode and the data auto-read function together helps to eliminate the external address and data bus necessary for external address inputs, thus increasing the design integration and system design scalability. The S26KL128SDABHB023 memory chip supports the unified Sector Erase, Bulk Erase and Mass Erase features, which allow a higher level of flexibility and management of data. The packet mode feature offers a flexible data structure and program memory layout, easing the system design process.

Conclusion

S26KL128SDABHB023 memory is a versatile non-volatile memory solution from Infineon Technologies. It is designed to meet the requirements of various applications, offering an extended power-off life of up to 10 years with a supply voltage range of 1.8V. The features of this memory chip such as advanced self-refresh (ASR) memory and programmable operation modes offer designers the flexibility to fine-tune the memory, thus allowing for great scalability of design integration and system design.

The specific data is subject to PDF, and the above content is for reference

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