S26KS256SDGBHB030 Allicdata Electronics
Allicdata Part #:

S26KS256SDGBHB030-ND

Manufacturer Part#:

S26KS256SDGBHB030

Price: $ 7.90
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 24FBGA
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 133...
DataSheet: S26KS256SDGBHB030 datasheetS26KS256SDGBHB030 Datasheet/PDF
Quantity: 338
1 +: $ 7.18200
10 +: $ 6.52680
25 +: $ 6.03742
100 +: $ 5.54778
338 +: $ 5.05826
676 +: $ 4.73194
1014 +: $ 4.34032
Stock 338Can Ship Immediately
$ 7.9
Specifications
Series: Automotive, AEC-Q100, HyperFlash™ KS
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 96ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)
Description

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S26KS256SDGBHB030 Memory Application Field and Working Principle

S26KS256SDGBHB030 is an integrated, non-volatile memory device, produced by a company called Sam Young Semiconductor Ltd, which is based in Taiwan. It is a part of the S26 semiconductor family.

The S26KS256SDGBHB030 memory device has a wide range of applications, from automotive to consumer electronics, which enables it to be used in a variety of industrial applications. Its main advantage is its high storage capacity, which can be used for storing images, videos, data, and other digital content. Additionally, the memory device is also very reliable, as it uses advanced techniques such as error correction code (ECC) and cyclic redundancy check (CRC).

Working Principle of the S26KS256SDGBHB030 Memory

The working principle of the S26KS256SDGBHB030 is quite simple. It uses an array of transistors and capacitors to store data. Each transistor acts like an on/off switch, while the capacitors act like batteries. The transistors can be programmed to store either a 0 or a 1 in the memory cell, allowing for the storage of digital data. Data is read from and written to the memory cell using special coding schemes.

When data is written to the cell, the transistors are switched on and off, depending on the code used. Then, the data is stored in the capacitors, allowing for it to be read later. The data is then read by applying a voltage to the capacitors, and when the voltage is removed, the transistors switch off and the data is removed from the cell. Finally, the data is then transmitted over a digital bus.

Advantages of the S26KS256SDGBHB030 Memory

The S26KS256SDGBHB030 memory device offers several advantages compared to other memory devices. First of all, it is capable of storing more data, due to its higher storage capacity. Additionally, the memory device also offers faster access speeds, as it uses advanced techniques such as error correction code and cyclic redundancy check. Furthermore, the memory device provides reliable data storage, which ensures data integrity in critical applications.

Furthermore, the S26KS256SDGBHB030 memory device is also very cost-effective, due to its low cost per bit. Additionally, the device can be easily integrated into existing systems, due to its compatibility with most surrounding components. As a result, the S26KS256SDGBHB030 memory device is widely used in many industrial applications today.

Conclusion

The S26KS256SDGBHB030 memory device is a reliable, high-capacity, and cost-effective memory device, which is used in many industrial applications today. Its main advantages include its high storage capacity, fast access speeds, reliable data storage, and low cost per bit. As a result, the memory device can be easily integrated into existing systems, making it an ideal choice for most businesses.

The specific data is subject to PDF, and the above content is for reference

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