S26KS512SDABHB030

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The S26KS512SDABHB030 is a 256-KiB, 32-bit wide, low-voltage and low-power, Static Random Access Memory (SRAM) designed to support the requirements of flash memory applications. The device is organized as 32,768K words and reads and writes up to 32 words per cycle. The S26KS512SDABHB030 has a broad range of operating voltages and speeds which make it suitable for a wide range of applications, including digital signal processing (DSP) and computing systems.

Application Field

The S26KS512SDABHB030 is commonly used in wireless communication, high-speed signal processing, base station and industrial control applications such as:

• Wireless base stations
• IoT Gateways
• Military communication systems
• Medical Imaging
• High-Speed Digital Signal Processing
• Industrial Automation

Working Principle

The S26KS512SDABHB030 is a dual-ported SRAM designed to control both a data bus and address bus via separate ports. The device is a synchronous low-voltage SRAM that supports read and write operations at full speed operation. The device also offers multiple read and write pipelining modes, burst cycles and a variety of operating modes that can be selected as industry-standard SRAM protocol or as independent data and address interfaces depending on the application.

The device has a two-stage write scheme, which enables both reading and writing from the same port simultaneously. The device supports standard industry protocols, including the flexible burst architecture (FBA) protocol, and uses a low-frequency clock for data transfer that reduces power consumption and increases performance. The device has a full dual-port control logic, allowing data and address bus access at the same time, to perform high-speed SRAM operations.

The S26KS512SDABHB030 offers a low standby power consumption with a low data retention voltage, providing a low power solution for many applications. This device also supports a wide range of operating temperatures from -40°C to +105°C, making it suitable for industrial use. Additionally, the device offers a high data retention voltage, which helps protect data stored in the SRAM.

The S26KS512SDABHB030 also offers enhanced security features, including write protect and read protect for the entire memory array, along with error correction and error location detection capabilities.

In summary, the S26KS512SDABHB030 is an ideal solution for many applications that require fast memory access and low power consumption, including wireless base stations, high speed digital signal processing, IoT Gateways, industrial automation, military communication systems and medical imaging.

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