S26KS256SDPBHM023

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The S26KS256SDPBHM023 memory is nonvolatile memory solution designed by Semtech Corporation. It is the latest addition to the company\'s family of SuperFlash NOR Flash memory products. It is an ideal solution for applications that require a large amount of storage with high read and write speeds.

The S26KS256SDPBHM023 provides up to 32 megabits of Flash memory in an 8-bit wide space. It utilizes a standard parallel NOR Flash interface and supports sustained read and write performance. This device supports Advanced Wear Leveling, On-Chip Error Correction, and Multiple Security Features with Write Queueing Protocol.

This product is targeted for applications such as embedded designs, consumer electronics, automotive electronics, industrial automation, and medical electronics. It is available in a range of smaller packages, including a TSOP-48, allowing designers to place the S26KS256SDPBHM023 in space-constrained applications. This device is ideal for consumer and portable device applications requiring high performance with efficient power management. It requires only one row of address pins and is available in multiple configurations.

The S26KS256SDPBHM023 features a standard Parallel NOR Flash Interface architecture. The device consists of an array of Flash memory blocks organized into four banks or partitions. These banks are further divided into 4K-word blocks. Each 4K block includes one 62-byte redundancy area, which can be used as an error correction code (ECC) buffer. Additionally, each 4K block contains a four-word Page buffer for write operations. This write queueing protocol provides improved write and further reduces the write latency of the device.

The S26KS256SDPBHM023 supports two types of memory reads: the Page Read Cycle and the Block Read Cycle. The Page Read Cycle is the faster cycle and operates with a latency of 20 nanoseconds. The Page Read Cycle allows the system to access a data address quickly without performing any additional address cycles. The Block Read Cycle also operates with a latency of 20 nanoseconds. The Block Read Cycle requires an additional address cycle due to the organization of the memory blocks.

The write cycles supported by the device are the Flash Write Cycle and the Flash Sector Erase Cycle. The Flash Write Cycle is the fastest cycle and operates with a latency of 750 nanoseconds. The Flash Sector Erase Cycle is slower and operates with a latency of 100 milliseconds. Both of these cycles support write queueing and multiple retries in case of errors, which improves the reliability and performance of write operation.

In addition to the variety of cycles supported by the S26KS256SDPBHM023, the device also supports a range of security features. These security features include Write Lock, Advanced One Time Programmable (OTP) and Flash Security Bit, along with secure read functions. These security features can be used to lock down the content of the device and prevent unauthorized access.

The S26KS256SDPBHM023 is an excellent solution for applications that require a large capacity storage with fast read and write speeds. It supports a standard Parallel NOR Flash Interface and Advanced Wear Leveling, On-Chip Error Correction, and Multiple Security Features with Write Queueing Protocol which makes it a reliable and highly optimized memory solution.

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