S30ML01GP50TFI510 Integrated Circuits (ICs) |
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Allicdata Part #: | S30ML01GP50TFI510-ND |
Manufacturer Part#: |
S30ML01GP50TFI510 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH MEMORY 48TSOP |
More Detail: | Memory IC |
DataSheet: | S30ML01GP50TFI510 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Memory-S30ML01GP50TFI510 Application Field and Working Principle
S30ML01GP50TFI510 is a part of the ORNAND family, which is a type of non-volatile memory manufactured by Toshiba. It is designed for high performance embedded applications and optical storage applications. This device has an integrated 16-bit data path and 8-bit column address/row multiplexing. It supports multiple functions including read, write, erasing, and programming.
The application field of S30ML01GP50TFI510 includes automotive, industrial, medical, aerospace and communication systems. Its non-volatile feature makes it attractive for applications like code storage, code flexibility, data retains and at cases wear leveling. The device has a feature of low current consumption which is suitable for portable and battery powered systems.
The working principle of S30ML01GP50TFI510 is based on a dual-stack p-channel architecture allowing ultra-fast read access suspended. It is also capable of quickly accessing data within various locations on the device. Data is stored and erased by Fowler Nordheim’s vertical tunneling and direct hot-electron injection technology. The device has a floating gate that can store electrons and helps to store the data.
The device has an improved Write/Erase system that increases the program/erase cycles. It also minimizes the write/erase disturbance, reduces write/erase time and improves write-disturbance immunity. Moreover, the device has a superburst architecture that helps to read large blocks of data fastly.
S30ML01GP50TFI510 is also capable of controlling the data retention of the device by setting a threshold voltage. This device has built-in ECC (Error Correction Code) and a shock/vibration detection system to detect the abrupt change in the environment. It also supports fast programming up to 4Gbits/s for read and write operations.
In conclusion, S30ML01GP50TFI510 is an advanced non-volatile memory device designed for embedded and optical storage applications. It is widely used in many applications due to its features like low power consumption, fast programming, improved error correction and robust performance. It is a reliable memory device with which users can trust and counts on.
The specific data is subject to PDF, and the above content is for reference
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