S30MS512R25TFW000 Integrated Circuits (ICs) |
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Allicdata Part #: | S30MS512R25TFW000-ND |
Manufacturer Part#: |
S30MS512R25TFW000 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH MEMORY 48TSOP |
More Detail: | Memory IC |
DataSheet: | S30MS512R25TFW000 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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S30MS512R25TFW000 is a type of memory, which is used in many application fields. It is a non-volatile random access memory (NVRAM) that provides fast and reliable storage for device users. It is widely used in consumer electronics, automotive, industrial and medical applications.
The main application fields for S30MS512R25TFW000 include consumer electronics, automotive, industrial and medical. Many consumer electronics products, such as digital tvs and monitors, consumer cameras and camcorders, cell phones and other handheld devices, audio systems and game systems, rely on S30MS512R25TFW000 memory to store data and programs. Automotive applications include cars, trucks and motorcycles, where the S30MS512R25TFW000 memory is used to store data related to engine diagnostics, steering systems, engine management systems and vehicle infotainment data.
The S30MS512R25TFW000 memory is also widely used in industrial applications, such as industrial automation, process control, manufacturing systems, robotics, and machine tools. Medical applications include medical equipment, patient data storage, and other benefit related applications. S30MS512R25TFW000 memory is especially useful for these types of applications, because it offers high reliability and is able to retain data in the event of a power failure or system crash.
The working principle of S30MS512R25TFW000 memory is relatively simple. It consists of a grid of bistable cells, each of which is composed of two MOSFET transistors. These cells are arranged in a 16x4 grid, with a total memory capacity of 64 bits. The transistors can be either “on” or “off”, representing a binary bit of information. In order to write data to the memory, the voltage across the cell is changed, which causes the transistors to either switch to the “on” state or the “off” state. To read data from the memory, the voltage is measured across the cell to determine the state of the transistors.
In conclusion, S30MS512R25TFW000 memory is a type of non-volatile memory that is used in a wide range of applications. These include consumer electronics, automotive, industrial and medical equipment and applications. The working principle of this type of memory is based on a bistable grid of transistors, which can be switched “on” or “off”, representing either a “0” or a “1”. Data is written and read by changing the voltage across the cell, either allowing the transistors to switch to the “on” state, or measuring the voltage across it to determine its state.
The specific data is subject to PDF, and the above content is for reference
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