S30MS01GP25TFW000 Integrated Circuits (ICs)

Series:	*
Part Status:	Obsolete

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Application Field

The S30MS01GP25TFW000 memory is a multi-level cell (MLC) NAND Flash memory device that is available in a 24-pin, small form factor package. It is designed to deliver a low power, cost competitive non-volatile, high density storage solution for a variety of embedded applications. The device provides a flexible and cost effective solution for applications such as multimedia memory cards, PDAs, digital still cameras, and consumer applications.The S30MS01GP25TFW000 memory has a block size of 128Kbytes and a device size of up to 2GB. The device provides a reliable, performance-optimized storage solution that is equipped with built-in Error Correction Code (ECC) for added data protection, and an on-the-fly data scrambling to eliminate repetition patterns in data. The device also features an external power-down pin for system power saving benefits, and an internal wear-leveling algorithm to ensure reliable data retention over multiple erasable cycles.

Working Principle

The S30MS01GP25TFW000 memory device operates by using a NAND Flash cell to store one bit of data. Each cell has three levels of programmable states, using a fixed voltage range to define the threshold levels. For each cell, two states are used to store logic "1" and "0," while the third state is used as an intermediate state during programming.The device utilizes an array of NAND Flash cells and Cylon’s patented Flash management circuitry to enable data writing, erasing and reading. Programming of the device occurs by applying voltage to the NAND cell containing the targeted data. The applied voltage will modify the threshold levels of the targeted cell. To read the memory, a voltage is applied to the cell and read to determine the threshold levels and the corresponding data (logic "1" or "0").The device has an on-the-fly data scrambling feature that automatically scrambles data before it is written to the device, thus eliminating repetitive patterns of data. The built-in ECC technology enables correction of single bit errors and detection of multiple bit errors within a defined number of bytes, providing increased data integrity and reliability. In addition, the device features an internal wear-leveling algorithm that spreads the write/erase cycles evenly throughout the entire device, thus providing uniform device wear pattern and data retention over multiple erasable cycles. The S30MS01GP25TFW000 memory has a 24-pin, small form factor package that is suitable for various embedded applications. The device is built with an external power-down pin feature that provides additional system power savings benefits. The device is equipped with multiple controlled valid pins and/or register bits to support various progressive validation schemes that protect data during power failures. Additionally, it has an internal power reset circuit for system power saving benefits by reducing the reset time needed for the system to regain control.

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