S30MS02GR25TFW000 Integrated Circuits (ICs) |
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Allicdata Part #: | S30MS02GR25TFW000-ND |
Manufacturer Part#: |
S30MS02GR25TFW000 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH MEMORY 48TSOP |
More Detail: | Memory IC |
DataSheet: | S30MS02GR25TFW000 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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What is the Application Field and Working Principle of the S30MS02GR25TFW000 Memory?
The S30MS02GR25TFW000 memory is an embedded non-volatile memory device, which is a kind of NAND flash type memory. It is ideal for embedded applications that require reliable non-volatile memory. It features a wide operating temperature range, high endurance, and high reliability.
The S30MS02GR25TFW000 memory offers many advantages over traditional non-volatile memories such as EEPROMs, SRAMs, and SD memory cards. Its fast random read and write speeds, low prices per bit, high endurance, and low power consumption make it an attractive choice for embedded applications.
Application Field
The S30MS02GR25TFW000 memory is suitable for many embedded applications. It is commonly used for data logging, real-time operating systems (RTOSs), embedded firmware, bootloaders, and data storage. It is suitable for applications where high reliability and non-volatility are required. It can be used in automotive, industrial, medical, and consumer electronics applications, as well as any other application requiring long data retention and endurance. Additionally, the S30MS02GR25TFW000 memory is suitable for automotive applications with stringent requirements, as it is AEC-Q100 qualified.
Working Principle
At a high level, the S30MS02GR25TFW000 memory works like most other NAND flash types. Data is written to and read from memory cells within the S30MS02GR25TFW000 memory device. To write data, host systems will send commands, address information, and data to the S30MS02GR25TFW000 memory. The S30MS02GR25TFW000 memory will then receive the information, interpret the commands and act accordingly. Data is then written to the specified memory cells and the process is complete.
To read from the memory, host systems will send commands, address information, and receive data from the S30MS02GR25TFW000 memory. The S30MS02GR25TFW000 memory will interpret the commands, determine the addresses, and send the requested data back to the host system. The host system will receive the data in the specified format, thus completing the read operation.
The S30MS02GR25TFW000 memory also includes many advanced features such as wear-leveling, advanced error correction code (ECC), and sustained write performance. Wear-leveling helps to ensure data is written evenly across the S30MS02GR25TFW000 memory device, reducing the chances of a single cell becoming worn out. ECC helps to correct any errors that occur when data is written or read from the S30MS02GR25TFW000 memory. Finally, the sustained write performance ensures that data is written quickly and efficiently.
Conclusion
The S30MS02GR25TFW000 memory is an advanced embedded non-volatile memory device. It is suitable for many different applications, and offers a wide range of features such as wear-leveling, advanced ECC, and sustained write performance. This makes the S30MS02GR25TFW000 memory an attractive choice for many embedded applications where reliability, non-volatility, and endurance are needed.
The specific data is subject to PDF, and the above content is for reference
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