S70GL02GS12FHBV23 Allicdata Electronics
Allicdata Part #:

S70GL02GS12FHBV23-ND

Manufacturer Part#:

S70GL02GS12FHBV23

Price: $ 17.48
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 2Gb (128M x 16) Parallel 12...
DataSheet: S70GL02GS12FHBV23 datasheetS70GL02GS12FHBV23 Datasheet/PDF
Quantity: 1000
1600 +: $ 15.88890
Stock 1000Can Ship Immediately
$ 17.48
Specifications
Series: Automotive, AEC-Q100, GL-S
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Description

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The S70GL02GS12FHBV23 is a kind of memory, and it offers a wide range of application fields and working principles. It belongs to NAND Flash memory, so it has some characteristics of NAND Flash technology. Firstly, this type of memory is non-volatile, which means that it retains its data even when power is not applied. Secondly, it has a wide operating voltage range, and is available in different capacity: from 128Mb to 2G bits. Thirdly, the data transfer rate is much faster than NOR Flash.

In terms of application fields, the S70GL02GS12FHBV23 is most commonly used in mobile devices and embedded systems. Its lightweight size and low power consumption makes it a suitable memory solution for these types of applications. For example, it is used in plastic cards such as SIM cards and smart cards, embedded systems such as routers, motor control systems, digital still cameras etc. Apart from that, it is also popular as an external memory solution in battery-operated devices such as MP3 players, portable media players and PDAs.

As for working principle, the S70GL02GS12FHBV23 is a type of memory that reads, writes and erases data in the form of charge. It uses two gate transistors to create a conductive path between the source and drain, allowing data to flow in or out. Reading is achieved by measuring the tunneling current through the active transistor as in the case of NAND Flash. Writing and erasing is done by applying a voltage to the gate transistor to create a charge that is then retained in the memory cell.

Overall, the S70GL02GS12FHBV23 is a versatile memory solution that offers a wide range of application fields and working principles. Its versatility combined with its low power consumption and decent data transfer rate make it an attractive choice for applications. Moreover, its non-volatile nature makes it a very reliable solution for data storage.

The specific data is subject to PDF, and the above content is for reference

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