SBC807-16LT1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BC807

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Introduction

The SBC807-16LT1G is a NPN Bipolar (BJT) Junction Transistor that is used in a variety of electronic applications. It is a small signal transistor with an operating current of 175mA, collector-emitter voltage of 25V, and a maximum collector power dissipation rating of 500mW. This device also has a low VCE(sat) of 0.2V, and a high current gain of 100. This makes it an ideal choice for applications such as amplifiers and switching circuits.

Application Field

The SBC807-16LT1G is used in many different applications. One of the most popular applications for this device is as an amplifier. It can be used to amplify weak signals and can also be used to drive loads with high current requirements. Another common application is switching circuits. It can be used to control power to small electrical components like LEDs and relays. It is also commonly used in transistors logic circuits, where it can serve as a gate or latch.

Working Principle

The SBC807-16LT1G works as a NPN Bipolar (BJT) Junction Transistor. This type of transistor consists of three regions of semiconductor material – two P-doped regions (Base and Collector) and one N-doped region (Emitter). A voltage applied across the Base and Emitter regions, known as the Base-Emitter voltage (VBE), turns the transistor "ON". This allows current to flow from the Collector to the Emitter. When the voltage drops below the Base-Emitter Voltage, the transistor is "OFF" and no current can flow.When the transistor is "ON" (VBE > 0.6V), current flows from the Collector to the Emitter and is controlled by the current gain (hfe), which is determined by the Base current. The current through the Collector is limited by the maximum current rating of the device (Icmax). The voltage across the Collector and Emitter (Vce) is limited by the maximum voltage rating of the device (Vcemax).

Conclusion

The SBC807-16LT1G is a versatile NPN Bipolar (BJT) Junction Transistor that can be used in a wide variety of applications. It has good current and voltage ratings and has a low saturation voltage. This makes it a good choice for amplifiers, switching circuits, and transistor logic circuits. The working principle of a NPN Bipolar (BJT) transistor is based on the flow of current from the collector to the emitter, which is controlled by the base current.

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