SBC846BWT1G Allicdata Electronics
Allicdata Part #:

SBC846BWT1GOSTR-ND

Manufacturer Part#:

SBC846BWT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A SC-70
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 150m...
DataSheet: SBC846BWT1G datasheetSBC846BWT1G Datasheet/PDF
Quantity: 3000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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The SBC846BWT1G is a single +12V, 6-pin bipolar junction transistor (BJT) that is ideal for use in switching power supply applications. It is rated for 8A and has a collector-emitter voltage rating of 500V. The SBC846BWT1G is available in both SOT-223 and TO-220 packages.

Bipolar junction transistors (BJTs) are three terminal electronic devices generally used as semiconductors in electronic circuits. They are composed of two p-n junctions placed next to each other and connected by a neutral region of the p-type semiconductor material. When a small current is passed through one terminal, the other two terminals are directly influenced by it, resulting in an amplified electrical signal.

When it comes to SBC846BWT1G, its principal application lies within the fields of switching power supply, linear regulator, and motor control. Since this component is relatively new, more potential applications are likely to come out in the near future.

The working principle of the SBC846BWT1G is simple and straightforward. When a small current passes through the emitter-base p-n junction, the holes and electrons that separate this junction start to recombine, forming a depletion region (i.e. a region with a lower charge than the area around it). This region amplifies the current flowing from the emitter, which is then modulated through the collector-base p-n junction to reach the switch’s output. In this way, the signal from the switch’s input is amplified and controlled to reach the switch’s output.

In conclusion, SBC846BWT1G is a single +12V, 6-pin bipolar junction transistor (BJT), rated for 8A and a collector-emitter voltage rating of 500V. It is ideal for use in switching power supply, linear regulator, and motor control applications. The working principle behind it is the modulation of a small current that passes through the input, through the emitter-base and collector-base p-n junction in order to reach the switch’s output.

The specific data is subject to PDF, and the above content is for reference

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