SBC846BLT3G Allicdata Electronics

SBC846BLT3G Discrete Semiconductor Products

Allicdata Part #:

SBC846BLT3GOSTR-ND

Manufacturer Part#:

SBC846BLT3G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 300m...
DataSheet: SBC846BLT3G datasheetSBC846BLT3G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02474
30000 +: $ 0.02328
50000 +: $ 0.02183
100000 +: $ 0.01940
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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A SBC846BLT3G BJT is a highly efficient, low-cost and high-frequency single bipolar junction transistor (BJT) that is widely used in high-power and medium-power applications. It is manufactured using a high-performance SiGe heterojunction. The SBC846BLT3G BJT is particularly suitable for use in high-frequency amplifiers, RF power amplifiers, transceivers, high-speed logic devices and so on due to its low input/output capacitance and low noise, as well as its low drive voltage requirements.

The SBC846BLT3G BJT is a three-terminal device consisting of a collector, an emitter and a base element formed from two PN junctions. This type of transistor is characterized by the spread of electrons from the emitter to the collector due to the electric field formed by the applied voltage between the base and the collector. This allows for the amplification of signals traveling between the two junctions. Current gain or Hfe is the measure of how well the BJT amplifies an input signal, and is generally inversely proportional to the collector-emitter voltage.

The SBC846BLT3G BJT is a highly efficient and reliable device. Its high efficiency is attributed to its SiGe heterojunction which minimizes the capacitive energy losses when switching frequency is increased. In addition, the device has a very low noise level, thus allowing precise and precise control of circuitry. It also has a low input/output capacitance which helps to reduce the time needed to fully close the switch in RF power amplifiers and transceivers.

The SBC846BLT3G BJT is increasingly being used for high-speed logic devices due to its high-speed switching ability. The device has very low input/output capacitance which helps to reduce the power consumption associated with high-speed logic devices. The device also has very high frequency tolerance and is capable of operating up to 1.2 GHz.

The SBC846BLT3G BJT is also often used in low-power applications as well. The device is able to operate at low voltages, thus allowing for less power consumption and thus reduced energy costs. In addition, the device\'s low input/output capacitance helps to reduce the time needed to close the switch in low power applications.

The SBC846BLT3G BJT is an extremely versatile and efficient device suitable for a wide range of applications. The device\'s low noise, low input/output capacitance and low drive voltage requirements make it well suited for both high-power and low-power applications. In addition, the device also has high frequency tolerance and high speed switching capabilities which make it particularly useful in high- frequency applications.

The specific data is subject to PDF, and the above content is for reference

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