| Allicdata Part #: | SBC856BDW1T3GOSTR-ND |
| Manufacturer Part#: |
SBC856BDW1T3G |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2PNP 65V 0.1A SOT-363 |
| More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 10... |
| DataSheet: | SBC856BDW1T3G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.03200 |
| 10 +: | $ 0.03104 |
| 100 +: | $ 0.03040 |
| 1000 +: | $ 0.02976 |
| 10000 +: | $ 0.02880 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 2 PNP (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
| Power - Max: | 380mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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The SBC856BDW1T3G is a type of bipolar transistor array that consists of eight NPN transistors and has various applications. It is often used for power amplifiers, power switching circuits and for building audio pre-amps. The SBC856BDW1T3G is known for its advanced features, such as high current gain, low electrical noise, and high voltage resistance. It is also a reliable parts and is able to handle a wide range of voltage and temperature ranges.
The SBC856BDW1T3G is mainly used for applications where it is important that the device operates consistently and reliably over a wide range of temperatures. This device has an operating temperature of -55 to 150 degrees Celsius and a Vceo rating of 10 V. It also has a current range of 0.5 microamps to 2 amps. The SBC856BDW1T3G has a maximum power dissipation of 175 mW, which makes it suitable for high-current applications such as power amplifiers.
The working principle of the SBC856BDW1T3G is based on that of a bipolar transistor. When a voltage is applied to the base of the device, electrons are excited and released, forming an electric charge. This charge moves to the collector and then to the emitter in the form of current, resulting in a switching action. The magnitude of the current flow depends on the amount of voltage applied to the base.
The SBC856BDW1T3G is often used for applications like power amplifiers, power switching circuits, and pre-amps. In power amplifiers, the transistor array is used to increase the gain of the amplifier. The SBC856BDW1T3G can provide a high current gain, making it suitable for gain control in power amplifiers. In power switching circuits, the device is used to provide switching currents of up to 2 amps, making it an ideal part for designing high-performance power electronic systems. The SBC856BDW1T3G can also be used for audio pre-amps, where it is used to control the volume of the audio output by providing the necessary switching current.
The SBC856BDW1T3G is a reliable and versatile transistor array that can be used for a wide range of applications. Its high current gain, low electrical noise and high voltage resistance make it suitable for use in power electronics and audio systems. Its versatile design, high reliability and wide temperature range make it an ideal choice for applications where a reliable and consistent performance is required.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...
SBC856BDW1T3G Datasheet/PDF