SBSS84LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | SBSS84LT1GOSTR-ND |
| Manufacturer Part#: |
SBSS84LT1G |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 50V 0.13A SOT-23 |
| More Detail: | P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount ... |
| DataSheet: |  SBSS84LT1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04883 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 225mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 5V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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SBSS84LT1G Application Field and Working Principle
The SBSS84LT1G is a type of field-effect transistor (FET). Specifically, it is a single enhancement-mode metal-oxide semiconductor FET (MOSFET) that is produced by SemTech, a semiconductor device manufacturer based in the United States. This device utilizes the latest advanced power technology, and is suitable for numerous low-voltage applications, such as power control and high-speed switching.
Application Field
Due to the low on-state resistance (RDS(ON)) and impressive fast switching capability of the SBSS84LT1G, it is suitable for numerous switcher applications, such as DC-DC converters, LCD displays, and power pumps. Additionally, it is a good choice for use in high-speed switching operations such as pulse-width modulation (PWM) controllers and solid-state relays (SSRs). The device also provides excellent current handling capabilities, with a drain current rated up to 9A and a maximum pulse current of 40A.
The SBSS84LT1G is ideal for cost-sensitive applications. The device is well-suited for use in the building blocks of notebook PCs and other consumer electronic products. It is also widely used for variable speed motor control and switching power supplies (SMPS), as well as in various lighting and commercial appliance systems.
Working Principle
The SBSS84LT1G is a non-polar MOSFET, and it features an enhancement-mode operation. Because of this, a voltage of VTH is required to turn the device on. VTH is the threshold voltage, the point at which an input voltage will cause the device to enter a conducting state. VTH varies depending on whether the device is p-channel or n-channel, and the specific value of VTH varies from one device to another.
The SBSS84LT1G operates as follows: when Vth is reached, the gate voltage (VG) is applied and electrons will flow from the source (S) to the drain (D), creating a conducting channel between the source and drain. This creates the on-state of the device. To turn the device off, the voltage is removed and the channel is then closed, making it no longer possible for current to flow from the source to the drain.
The SBSS84LT1G features a maximum input voltage, VGS, of 12V, and a maximum drain-source voltage range of 100V, making it suitable for use in high-voltage applications such as motor control and switch mode power supplies. It also has a reverse drain-source voltage, VR, of 30V, which is important for high-speed switching functionality.
The SBSS84LT1G is a gain-limited device and thus the gains of the device vary significantly depending on the gate voltage source. The gains are highest at low gate voltages, but they decrease rapidly as the gate voltage is increased. A reverse-recovery characteristic is also present, meaning that the device will not experience a significant increase in current after turn-off, which can potentially reduce losses in applications such as DC-DC converters.
Conclusion
The SBSS84LT1G is an advanced single enhancement-mode MOSFET device that is suitable for numerous low-voltage applications. It can provide excellent current handling capabilities and is well suited for cost-sensitive applications. The device’s remarkable fast-switching capability and low on-state resistance make it ideal for use in PWM controllers and similar high-speed systems. Additionally, the reverse-recovery characteristic of the device means it can be used in applications where switching losses are important considerations.
The specific data is subject to PDF, and the above content is for reference
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| SBSS84LT1G | ON Semicondu... | 0.06 $ | 1000 | MOSFET P-CH 50V 0.13A SOT... |
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