Allicdata Part #: | SBVS138LT1G-ND |
Manufacturer Part#: |
SBVS138LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 0.2A SOT-23 |
More Detail: | MOSFET N-CH 50V 0.2A SOT-23 |
DataSheet: | SBVS138LT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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SBVS138LT1G is a single N-channel Trench MOSFET in a SOT-223 package. It is manufactured by Vishay Semiconductors and is part of their statediscrete FET series. With the excellent design, low on-resistance and very low gate-charge, this device demonstrates very good temperature stability and repetition accuracy at operating frequency. It is suitable for applications such as power switching, motor control, lighting, protection switching and voltage adjustable.
The SBVS138LT1G works by using an insulated gate in the form of a MOSFET (metal-oxide-semiconductor field-effect transistor), which allows it to act as a voltage-controlled switch. When the gate is held at a negative voltage, the device is turned “off” and no current can flow through it; when the gate is held at a positive voltage, the device is turned “on” and current will flow through it. By controlling the voltage applied to the gate, the current flow can be controlled. This type of transistor is unipolar, meaning it is only able to pass current in one direction.
This type of transistor is great for applications requiring AC or pulse-width modulation of the operating voltage. It is also good for applications that require high switching speeds since its high frequency of oscillation affords excellent high-speed switching. Its low on-resistance also makes it suitable for applications that require low loss such as power converters and motor control. Finally, its very high breakdown voltage makes it good for applications that require high voltage operation.
The characteristics of this device make the SBVS138LT1G well-suited for switching and signal processing applications. It is well-suited for DC motor control applications, lighting and power switching applications, adjustable voltage applications, and protection switching applications. It is also great for signal-processing applications such as communication systems, instrumentation, and audio amplifiers. Finally, it is suitable for pulse-width modulation applications such as motor control and power converters.
In summary, the SBVS138LT1G is a single N-channel Trench MOSFET device manufactured by Vishay Semiconductors, suitable for many applications due to its excellent design, low on-resistance and very low gate-charge. Its high breakdown voltage, excellent temperature stability, high frequency of oscillation, low on-resistance and excellent repetition accuracy make it suitable for switching and signal processing applications including DC motor control applications, lighting and power switching applications, adjustable voltage applications, protection switching applications, communication systems, instrumentation, audio amplifiers and pulse-width modulation applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SBVS138LT1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 0.2A SOT-... |
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