SCH2825-TL-E Discrete Semiconductor Products |
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Allicdata Part #: | 869-1197-2-ND |
Manufacturer Part#: |
SCH2825-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.6A SCH6 |
More Detail: | N-Channel 30V 1.6A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | SCH2825-TL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-SCH |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 88pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 800mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SCH2825-TL-E is a single N-channel IC and a power MOSFET transistor. It is most commonly used in voltage regulator, power supply, switching power supply, amplifier and motor control applications. The main features of this device are high power dissipation, high current and low on-resistance.
The SCH2825-TL-E is a Enhancement-mode power field-effect transistor which requires a gate-source voltage to turn them on. The drain-source voltage (Vds) is used to control the current flow through the device. The device is turned on and off by applying the appropriate gate-source voltage. When the gate-source voltage (Vgs) is below the threshold voltage (Vth), the transistor is off and no current is flowing from the source to the drain. When the Vgs is equal to or greater than the Vth, the transistor is on with near-maximum current flowing from source to drain.
The primary advantage of the SCH2825-TL-E device is that it has very low on-resistance. Since the resistance is low, it allows the device to carry large amounts of current. This means that the device can be used for applications that require higher current levels than traditional transistors. Additionally, the low resistance reduces power dissipation and heat, making the device ideal for applications where efficiency is key.
The SCH2825-TL-E is rated for voltage up to 20V and current up to 8A. This makes it suitable for use in many applications that require high voltage and current. It has a maximum drain-source breakdown voltage of 20V and a maximum Gate-Source breakdown voltage of 10V. It has an on-resistance of 10mΩ and a power dissipation of 4.2W.
The device is also characterized by a fast switching speed. The turn-on and turn-off times are typically in the range of nanoseconds making them suitable for applications requiring high switching speeds. The temperature range for this device is -55°C to +150°C. This makes it suitable for applications in extreme temperature conditions.
The SCH2825-TL-E MOSFET provides excellent performance for voltage regulator, power supply, switching power supply, amplifier and motor control applications. It is characterized by its low on-resistance, high power dissipation, high current levels and fast switching speeds. With its wide operating temperature range and voltage/current ratings, the device is suitable for many applications in different types of environments.
The specific data is subject to PDF, and the above content is for reference
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