SFH9250L

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The SFH9250L is a single N-channel vertical DMOS FET with a wide range of applications including load switch, pulser, button replacement, and low power amplifier. It is suitable for automatic insertion and designed for minimal gate-threshold and effective drive current. This FET is composed of a vertical N-channel MOSFET and a rectifying diode, constructed on a single silicon substrate. The MOSFET part uses a one-gate DMOS process with an isolated and released nitride oxide gate, resulting in an accurately controlled threshold voltage.

The maximum overload current that this FET can handle is 6.8A and the maximum power dissipation is 39W. The on-resistance range is typically 0.12Ω – 0.15Ω, which makes it suitable for higher resistance applications. The leakage current when the MOSFET is off is typically less than 1μA, providing better performance than any other FET.

The operating temperature range of this FET is between -40 °C and 125 °C, and its drain source voltage is 200V. The gfs (max) when the W/L aspect ratio of this FET is 16/3 is 55mS. The gate-drain capacitance is typically 15pF. It has an ESD tolerance of 8 kV. All these features make the SFH9250L suitable for a wide range of automotive and industrial applications.

The SFH9250L has a working principle similar to any other MOSFET. When a positive voltage is applied to the gate of this FET, the voltage at the gate junction will increase and create a channel from the source to the drain. This channel is electrically driven by the gate voltage, allowing current to flow from the source to the drain. The channel is controllable by the gate voltage, so by varying the gate voltage, one can vary the current flow.

As the channel formed by the MOSFET gets larger, the MOSFET drains more current and begins to work as a switch with its drain source voltage reaching the source voltage. The gate voltage should always remain positive compared to the source. The maximum allowed drain source voltage is 200V. The SFH9250L is designed with robustness and low on-resistance, making it well-suited for applications requiring speed, noise, and temperature management.

In summary, the SFH9250L is a single N-Channel vertical DMOS FET with a wide range of applications. It features low threshold voltage, low on-resistance, low gate-drain capacitance, wide operating temperature range, and high ESD tolerance. This FET is suitable for automotive and industrial applications as it offers robustness, speed, and noise management. The working principle of this FET is similar to any other MOSFET.

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