SI3139KE-TP Allicdata Electronics

SI3139KE-TP Discrete Semiconductor Products

Allicdata Part #:

SI3139KE-TPMSTR-ND

Manufacturer Part#:

SI3139KE-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: P-CHANNEL MOSFET, SOT-523 PACKAG
More Detail: P-Channel 20V 660mA 150mW Surface Mount SOT-523
DataSheet: SI3139KE-TP datasheetSI3139KE-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05506
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 6V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI3139KE-TP is a type of Field Effect Transistor (FET) used for a wide variety of applications. The FET is a three-terminal semiconductor device that is used as a switch or amplifier in electronic circuit designs. It is the basic building block for a variety of modern digital circuits and systems. A FET is a type of transistor that uses electric fields to control the flow of electrons.The SI3139KE-TP is a specific type of FET known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is used in many modern electronics, such as mobile phones, computers, and other home appliances. The FET is usually used as a switch in integrated circuits to control the current flow between two or more electronic components. The FET can also be used as an amplifier to amplify the current output of an electronic device.

The SI3139KE-TP is a N-Channel depletion-mode enhancement enhancement MOSFET. It is designed to handle currents up to 8.0 amperes and voltages up to 45 volts. It is a three-terminal device with a source, gate, and drain. The source and gate are interconnected with an internal Metal-Oxide-Semiconductor (MOS) layer. This layer acts as an insulator that prevents current from flowing between the source and gate. The drain is an electrode through which current flows when the gate is charged.The working principle of the SI3139KE-TP is based on the principle of charge transfer through a semiconductor device. The gate of a FET is made up of a metal-oxide semiconductor layer, which acts as an insulator. When a voltage is applied to the gate, the metal-oxide semiconductor layer acts as a capacitance and stores the charge. This stored charge induces a charge transfer between the source and the drain, resulting in current flow. The amount of current that flows through the device is controlled by the amount of charge that is stored on the gate.

The SI3139KE-TP is typically used as a switch or amplifier in a variety of electronic circuits. It can be used to control the current flow between two or more components in a circuit. It can also be used to amplify the current output of an electronic device. It is also used in power supplies and inverters, as well as a variety of other applications.In summary, the SI3139KE-TP is a type of MOSFET that is used for a wide variety of applications. It is a three-terminal device with a source, gate, and drain. The working principle is based on the principle of charge transfer through a semiconductor device. The gate acts as a capacitance to store charge, which then induces a charge transfer between the source and drain, resulting in current flow. The SI3139KE-TP is typically used as a switch or amplifier in electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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