| Allicdata Part #: | SI4712DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4712DY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 14.6A 8SOIC |
| More Detail: | N-Channel 30V 14.6A (Tc) 2.5W (Ta), 5W (Tc) Surfac... |
| DataSheet: |  SI4712DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1084pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14.6A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
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The SI4712DY-T1-GE3 transistor is one of the most commonly used transistors for power switching applications. It is a single junction field effect transistor (FET) with a n-type channel structure. The SI4712DY-T1-GE3 is capable of delivering extremely high currents due to its low on-resistance, high gain, and high voltage capability. These characteristics make it ideal for high-power switching applications.
The feature of the SI4712DY-T1-GE3 that is most noteworthy is its extremely low “on-resistance”, or RDS(on). On-resistance measures how strongly the transistor will resist the flow of current when it is switched on. A transistor with a low on-resistance will draw less current than a transistor with a high on-resistance when it is switched on, meaning that it will be more efficient. The SI4712DY-T1-GE3 has an on-resistance of just 0.25 ohms, making it one of the lowest on-resistance transistors on the market. This low on-resistance makes the SI4712DY-T1-GE3 ideal for high-power applications like switching relays and high power DC motors.
The SI4712DY-T1-GE3 is also notable for its high gain and high voltage capability. The transistor has an amplification factor of about 10A, meaning it can amplify an input voltage by a factor of 10. This makes it ideal for applications where high voltage or high current are needed. Additionally, the SI4712DY-T1-GE3 is capable of operating at up to 25V. This allows it to be used in high-voltage circuits and make a wide range of applications possible.
The SI4712DY-T1-GE3 is a versatile transistor which is suitable for many different applications. It is particularly useful for switching relays and DC motors, as it offers high current capability and low on-resistance. Additionally, its high gain and high voltage capabilities make it suitable for many different high power applications. Thanks to its versatility, the SI4712DY-T1-GE3 is one of the most commonly used transistors for power switching applications today.
The specific data is subject to PDF, and the above content is for reference
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