SI7230DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7230DN-T1-GE3-ND

Manufacturer Part#:

SI7230DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 9A PPAK 1212-8
More Detail: N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount Powe...
DataSheet: SI7230DN-T1-GE3 datasheetSI7230DN-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7230DN-T1-GE3 is a high-performance single-channel N-Channel JFET (Junction Field Effect Transistor). This device has many applications in the consumer electronics sector, such as for power amplifiers, low current analog signal processing, voltage and current sensing and power management. The SI7230DN-T1-GE3 is a member of International Rectifier’s proprietary Smart Power family of products, featuring the latest technology advancements in the field of analog switching. This transistor features several distinct features, such as low threshold voltage, low on-resistance, high input impedance and fast switching speeds. These features make it a great choice for applications that require high levels of performance and reliability.The SI7230DN-T1-GE3 transistor is insulated gate FET (IGFET, a type of Field Effect Transistor (FET)). In general, IGFETs are used to control electronic signals by converting analogue input signals into digital signals. They are formed from a special type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which contains a gate that acts as an insulator between the source and the drain. In IGFETs, the gate is controlled by a voltage applied to it, which produces an electric field that controls the current flow through the device.The SI7230DN-T1-GE3 has an input voltage range of 0-20V and a maximum output voltage of 18V. The maximum power dissipation of this device is 250mW with an operating temperature of -65°C to +175°C. Additionally, it features an input capacitance of 15pF and an on-resistance of 0.42Ω. This transistor is available in two different packages, the TO-252 and the SOIC-8.The working principle of this device is based on its FET construction, which essentially functions like a voltage-controlled switch. When the gate voltage is greater than the threshold voltage, the device turns on and the current begins to flow. When the voltage drops below the threshold voltage, the device turns off and the current ceases to flow. In order to protect the device from over-current, a current limiting resistor is used.As mentioned previously, the SI7230DN-T1-GE3 transistor is a great choice for applications that require high levels of performance and reliability. It is ideal for use in power amplifiers, voltage regulators, active filters, voltage and current sensing circuitry, low current analog signal processing, automotive electronics, and makers boards. Furthermore, due to its small form factor, this transistor is well suited for use in portable or space-constrained applications.In conclusion, the SI7230DN-T1-GE3 is a high-performance single-channel N-Channel JFET transistor that is well suited for power amplification, low current analog signal processing and voltage and current sensing. It features a low threshold voltage, low on-resistance, and fast switching speeds. This transistor is available in a variety of packages and can be used for a plethora of applications.

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