SI8407DB-T2-E1 Allicdata Electronics
Allicdata Part #:

SI8407DB-T2-E1TR-ND

Manufacturer Part#:

SI8407DB-T2-E1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 5.8A 2X2 6-MFP
More Detail: P-Channel 20V 5.8A (Ta) 1.47W (Ta) Surface Mount 6...
DataSheet: SI8407DB-T2-E1 datasheetSI8407DB-T2-E1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 900mV @ 350µA
Package / Case: 6-MICRO FOOT®CSP
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.47W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI8407DB-T2-E1 is an enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed to serve as a bridge between a power supply and digital circuitry in a variety of applications. The SI8407DB-T2-E1 is capable of handling up to 500 milliamps of current and is designed to be used in an environment of continuous voltage up to 60 volts. The SI8407DB-T2-E1 has a drain-source on-state resistance (RDS(on)) of 1.1-1.3 Ohm, along with an input capacitance (Ciss) of 1500 pF. With its low on-resistance and small capacitance, the SI8407DB-T2-E1 is ideal for powering and controlling small loads, such as low-current logic signals and relay coils.

The SI8407DB-T2-E1 is widely used in a range of applications, including industrial equipment, automotive electronics, computers and peripherals, office machines, and consumer electronics. For example, in industrial motor control applications, the SI8407DB-T2-E1 is often used to connect a power supply to a digital circuit in order to switch the motor on and off. This device is also used in applications such as digital-to-analog converters, where the SI8407DB-T2-E1 can be used to regulate the amount of current supplied to a sensor. The SI8407DB-T2-E1 can also be used in cell phones and other portable devices to control battery charging and PWM circuitry.

The working principle of the SI8407DB-T2-E1 is based on the fact that it is an enhancement-mode MOSFET. When the gate voltage is raised to the threshold voltage, the channel between the source and drain is opened, allowing current to flow. The current is regulated by the resistance between the source and drain, which is determined by the amount of voltage applied to the gate. By controlling the voltage at the gate, the user can control the amount of current flowing through the device itself.

The SI8407DB-T2-E1 can be used in a number of applications, including automotive electronics, computers and peripherals, office machines, industrial applications, and consumer electronics. Its low on-resistance and small capacitance make it ideal for powering and controlling small loads, such as low-current logic signals and relay coils. The working principle of the device is based on the fact that it is an enhancement-mode MOSFET, allowing the user to regulate the flow of current through the device by controlling the voltage at the gate.

The specific data is subject to PDF, and the above content is for reference

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