SI8439DB-T1-E1

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The SI8439DB-T1-E1 is an advanced technology N-channel, 20-V (D-S), 0.11-Ω (Typ) 1-A power MOSFET that is ideally suited for applications such as load switch, power switch, and driver. It features a low drain-to-source voltage (RDS(on)), ultra-low gate charge and improved power handling, making it suitable for many types of high frequency and power conversion applications.

The SI8439DB-T1-E1 has an advanced silicon process technology to minimize gate charge, RDS(on), and improve device power dissipation. In addition, its high-speed switching performance, very fast switching turn on/off time, and advanced drivers make it a suitable choice for many RF, sound and wireless applications.

The SI8439DB-T1-E1 is manufactured in advanced process technologies and fabrication processes to provide a reliable, cost-effective solution for a wide range of high-speed switching and switching power conversion applications. It is well suited for high-speed switching, driver, and low voltage regulator applications.

The SI8439DB-T1-E1 is a highly integrated, high-performance N-Channel MOSFET which works under a direct-drain-to-source voltage. It features an advanced soft-starting technology to reduce output inductance, an enhanced low operating temperature, an improved breakdown voltage, an increased device gate charge, and improved operational stability. Thanks to these features, the device is able to provide an excellent switching performance with low noise and power loss.

In addition, its advanced soft switching technology minimizes the effect of harmonic frequencies and reduces output inductance to maximize efficiency. Furthermore, its ultra-low charge gate enables faster switching with improved immunity to ESD and EMI.

In addition to its low RDS(on), the SI8439DB-T1-E1 can also be used as a load switch, power switch, and driver. It provides excellent load current handling and switching capabilities along with a low thermal/electrical/mechanical stress making it suitable for a wide range of applications.

The SI8439DB-T1-E1 can be used in a variety of applications requiring switching, such as switching power supplies, battery chargers, and DC-to-DC converters. It is also suitable for automotive applications, such as illuminated entry/exit switches, sensor switching and driver applications. Furthermore, it can be used in other applications requiring high performance, fast switching, and excellent power dissipation such as in entertainment systems, home appliances and consumer products.

The SI8439DB-T1-E1 can also be used in consumer electronics, industrial and residential lighting, audio amplifiers, and power inverters. In these applications, it offers good efficiency and superior current handling for minimal power loss.

In summary, the SI8439DB-T1-E1 is an advanced technology N-channel, 20-V (D-S), 0.11-Ω (Typ) 1-A power MOSFET that is ideally suited for applications such as load switch, power switch, and driver. It features a low drain-to-source voltage (RDS(on)), ultra-low gate charge and improved power handling, making it suitable for many types of high frequency and power conversion applications. It provides excellent load current handling and switching capabilities along with a low thermal/electrical/mechanical stress making it suitable for a wide range of applications.

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