SI8413DB-T1-E1

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The SI8413DB-T1-E1 is a single N-channel power MOSFET from Vishay Siliconix, designed for a wide range of automotive, computing, and industrial applications. The MOSFET offers superior performance, superior thermal and electrical characteristics, and is suitable for both single-ended and differential signal processing. The application fields of the SI8413DB-T1-E1 include switching, powering, and interfacing of low-voltage, high-speed circuits. The device can be used for a variety of automotive and computing applications, such as switching for automotive engine control, power management for computing motherboard and server designs, and interfacing of industrial and communication circuits.The SI8413DB-T1-E1 is a member of the Vishay Siliconix family of power MOSFETs. It features a low threshold voltage of 0.8 V, a very high drain-source breakdown voltage of 175 V, and a quiet gate drive of 10V. It also features high maximum current handling capability of 5.5 A at Tj = 150 C. In addition, this MOSFET comes in a tiny | PowerPAK™ SOT-223 package.The working principle of MOSFETs has been well-established over many years of research and development. It involves the movement of charge carriers (electrons and holes) through a channel in the semiconductor material. When a gate voltage is applied, it creates an electrostatic field. This field attracts and repels charge carriers from the channel, allowing or blocking the flow of current through the device. It is this basic principle that underlies the operation of all Field-Effect Transistors (FETs), including MOSFETs.The SI8413DB-T1-E1, being an N-channel MOSFET, utilizes this same basic principle. It allows for the controlled passage of current between the source and drain terminals. The device has an extremely low on-state resistance, allowing it to pass large currents, even at very low gate voltages.In conclusion, the SI8413DB-T1-E1 is a single N-channel power MOSFET from Vishay Siliconix designed for a wide range of automotive, computing, and industrial applications. It features a low threshold voltage of 0.8 V, a high drain-source breakdown voltage of 175 V, and a quiet gate drive of 10V. It utilizes the well-understood working principle of Field-Effect Transistors, allowing for the controlled passage of current between source and drain terminals. The device is suitable for both single-ended and differential signal processing, making it an ideal choice for many applications.

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