SI8457DB-T1-E1

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	4-UFBGA
Supplier Device Package:	4-MICRO FOOT® (1.6x1.6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.1W (Ta), 2.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	93nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	19 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SI8457DB-T1-E1 application field and working principle

Introduction

The SI8457DB-T1-E1 is a single P-Channel MOSFET enclosed in a small SO8 package from Vishay. It has a low gate charge, logic level, low threshold voltage and easy to connect layout that makes it suitable for a host of applications and suitable for a wide range of power control applications. The device is designed to provide low-level input signal, controlling a load and high side switching.

Application Field

The SI8457DB-T1-E1 is designed to be used in a wide range of applications such as power switches, audio power amplifiers and power supplies. This particular model has a total gate charge of only 4.3nC and a drain-source breakdown voltage of 35V which is ideal for high power performance.The device is suitable for switching any medium power DC motor and has many advantages when used in motor control applications including:• Low voltage drop (Vgs)• High switching speed.• Low gate charge for improved system efficiency.• Low on-state gate resistance for efficient switching.• Rugged construction for high-reliability operation.It is also appropriate for use in power semiconductor applications due to its excellent on/off characteristics and rugged construction.

Working Principle

A MOSFET is an insulated-gate field-effect transistor which operates using the principle of electronic charge transfer. When a MOSFET is activated, the transfer of charge between its source and drain terminals is controlled by applying a voltage at the gate terminal. As a result, when a voltage is applied at the gate terminal, the resistance between the source and the drain decreases significantly, allowing current to flow.The SI8457DB-T1-E1 is a single P-channel MOSFET with a gate threshold voltage of 0.7V, allowing the use of logic level signals to switch the device on and off. With a maximum current rating of 15A and a maximum allowed drain source voltage of 35V, this device is suitable for most general purpose power switching applications.The device can be driven by either a digital waveform or, more conventionally, with a gate drive IC such as an ICM7555. The gate drive IC can be used to produce a much higher voltage at the gate than the logic level signal of 0.7V given by the logic gate. This is necessary to secure the gate-source voltage over the entire load current range, thus keeping the device in its active region for the duration of the current flow.

Conclusion

The SI8457DB-T1-E1 is an ideal choice for a wide range of high powers applications such as power switches, audio power amplifiers and power supplies due to its low gate charge, logic level, low threshold voltage and easy to connect layout. The device is also an attractive choice for motor control systems due to its low voltage drop, high switching speed, low gate charge and rugged construction. The device can be driven by either a digital waveform or an ICM7555 gate drive IC, which can produce a much higher voltage at the gate than the logic level signal of 0.7V.

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