SI8467DB-T2-E1

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Transistors - FETs and MOSFETs - Single devices have a wide range of applications in both consumer and industrial electronics. One such device is the SI8467DB-T2-E1, which is a single P-Channel, high voltage MOSFET. This device is designed to handle up to 100 volts and has an operating range up to 175 degrees Celsius.

The SI8467DB-T2-E1 MOSFET is primarily used in applications where high voltage switching is necessary. It is commonly used in circuits that require high frequency switching, such as inverters, converters, solid state relays, and high voltage circuits. The device\'s low gate charge and output capacitance make it well suited for high speed switching applications.

The operating principle of the SI8467DB-T2-E1 is based on the same principle as other MOSFETs—the electrical current passes through a semiconductor material from the source to the drain when the gate voltage is applied. The gate voltage requires a negative voltage, relative to the source voltage, to turn the device on. This device\'s Drain-Source voltage (V DS ) is typically limited to 100 volts.

In order to properly use the SI8467DB-T2-E1, it is important to understand its operating parameters. A good starting point is to read the manufacturer\'s datasheet. The datasheet contains the device’s source-drain current rating, drain-source voltage rating, on-resistance (R DSON ), and off-state current limit (I OFF ).

It is also important to consider the operating temperature range of the device. The SI8467DB-T2-E1 is rated for operation from 175°C to 150°C, with a threshold voltage of 6 volts. In order to maintain the safe operating temperature range, a proper heatsink is required. A fan can be used to decrease the overall temperature of the device.

The SI8467DB-T2-E1 MOSFET is a great choice for high voltage and high frequency switching applications. It is important to understand the device’s operating parameters and make sure that it is used within its safe operating temperature range to maximize its effectiveness.

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