| Allicdata Part #: | SI8469DB-T2-E1TR-ND |
| Manufacturer Part#: |
SI8469DB-T2-E1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 8V 3.6A MICRO |
| More Detail: | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surfa... |
| DataSheet: |  SI8469DB-T2-E1 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Package / Case: | 4-UFBGA |
| Supplier Device Package: | 4-Microfoot |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 780mW (Ta), 1.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 4V |
| Vgs (Max): | ±5V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 64 mOhm @ 1.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Drain to Source Voltage (Vdss): | 8V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
Description
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The SI8469DB-T2-E1 is a device commonly used for a wide range of applications due to its simplicity and reliability. This article will explore the application field and working principle of the SI8469DB-T2-E1, giving readers an insight into its capabilities.The SI8469DB-T2-E1 is a single n-channel Mosfet (N-MOSFET) and is commonly used in low voltage circuits. It is capable of performing functions such as signal switching, powering on/off low voltage devices or circuits, and protecting systems from overvoltages or electrostatic discharges (ESDs). It is also ideal for driving inductive loads, such as motors and relays, as it can handle large spikes of current.The SI8469DB-T2-E1 is a robust, low cost device which offers excellent performance for a wide range of applications. Due to its low on-resistance and high peak current capabilities, it is popular for converting or switching low/medium voltage power into higher voltages. This makes it ideal for a variety of uses, such as in switching power supplies, motor drive circuits, power conditioning, and general signal and power switching.The SI8469DB-T2-E1 is a three-terminal device which consists of a drain, gate and source terminal. The primary function of the device is to control the flow of current from the drain to the source, by varying the voltage applied to the gate. When the gate voltage is at a negative potential, the channel between the drain and source is "pinched off," and no current is allowed to flow. When the gate voltage is at a positive potential, electrons are "ejected" from the surface of the channel, and an amount of current proportional to the gate voltage is allowed to flow.The SI8469DB-T2-E1 is best suited for applications that require a high side switch. This is due to its clever architecture which can enable switching from one voltage to another, such as from high voltage to a Battery voltage or from a Battery voltage to a higher voltage. Due to its low gate voltage threshold and fast switching speed, the SI8469DB-T2-E1 is also suitable for applications requiring high speed switching structures, such as in motor control applications, where the high side switch is used to control the motor power.The SI8469DB-T2-E1 is also well suited for low voltage applications, as its low on resistance and fast switching speeds are ideal for controlling a wide range of low voltage power sources or loads. Its low on-resistance can help reduce the power losses in the circuit and its fast switching speeds can help reduce the response time of the system.Finally, the SI8469DB-T2-E1 has high current and voltage ratings, making it suitable for applications requiring high power, such as in high voltage distribution, DC to DC conversion, and in switching power supplies. Its high current rating means that it can switch large quantities of current quickly, whereas its high voltage rating makes it suitable for applications requiring a high breakdown voltage.In conclusion, the SI8469DB-T2-E1 is a versatile and reliable device which can be applied to a wide range of applications. Its low on resistance and fast switching speeds makes it suitable for low power, low voltage applications; whereas its robust structure and high current and voltage ratings makes it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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