SI8473EDB-T1-E1 Datasheet/PDFThe Siliconix SI8473EDB-T1-E1, known as an advanced trench MOSFET, is a very versatile single-channel FET device. It is commonly used in numerous applications including level shifting, voltage conversion, and power switching.
The SI8473EDB-T1-E1 is a P-channel device designed on a trench MOSFET process. It features a low RDS(on) of 0.65 Ω and a maximum drain current of 5A. It also offers a wide variety of applications including level shifting, voltage conversion, and power switching. Moreover, it features excellent thermal performance and low gate charge for higher efficiency and better design.
When it comes to applications, the SI8473EDB-T1-E1 offers a wide variety of possibilities. It can be used as a high-side switch, a level shifter, or a voltage converter. It is also extensively used in the energy storage industry, both as a high-side switch and as a diode-programmed switch.
In terms of its working principle, the SI8473EDB-T1-E1 works by allowing electrons and holes to flow through the depletion and accumulation layers of the device. When a positive DC voltage is applied to the gate, the MOSFET will become conductive, allowing current to flow from the drain to the source terminal. This current flow can be used to control a load or to switch a signal.
When designing with the SI8473EDB-T1-E1, it is important to note that the device should not be used with excessive voltage or current. The device is rated for a maximum voltage of 20V and a maximum current of 5A. It is also important to ensure that the gate is properly biased to ensure that the device is operating correctly. This can be achieved by using a gate driver circuit or, if necessary, a separate power supply.
Overall, the SI8473EDB-T1-E1 is a very useful single-channel FET device that is used in myriad applications. It is designed on a trench MOSFET process and features a low RDS(on), excellent thermal performance, and low gate charge. Moreover, it can be used as a high-side switch, a level shifter, or a voltage converter, and is also extensively used in the energy storage industry. It is important to ensure that the device is operated within its rated specifications, and that the gate is properly biased.